二手 AIXTRON Tricent #9190702 待售
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ID: 9190702
晶圆大小: 12"
优质的: 2008
Atomic layer deposition system, 12"
Frame:
Tricent ALD Process cluster oxide
Gas mixing system
Precurson liquid delivery system
ALD Reactor
Vacuum and cooling systems
(2) Tricent ALD Heat exchangers: 220°C
Automatic wafer transfer system
Tricent ALD double O-ring pump
Options:
Tricent ALD Ozone generator for 2 PMs
Tricent ALD set of precursor tanks for vaporizer for 2 PM's
Automatic wafer transfer system:
Fully automated cassette-to-cassette wafer loading and unloading
Configurations: 25 x 300 mm
(3) FOUP loading ports
Loadlock A: Batch 25 x 300 mm
Loadlock B: Batch 25 x 300 mm
Vacuum handling platform: 4 MESC-type process modules
Wafer handling platform includes:
Front end atmospheric module
Front end atmospheric robot
Vacuum transport chamber and frame
MagnaTran magnetically driven
Fully encapsulated vacuum robot
Transfer arm with high temperature end effector
Wafer alignment module
Tricent ALD O-Ring pump:
PM1/PM2 Tricent ALD Process cluster oxide: (2) Deposition modules
Each PM:
Gas mixing system
Ventilated gas mixing cabinet
Electro-polished 316 SUS tubing
VCR-Connectors all orbital welded
Individual control valves:
Pressure indicator switch
Check valves
Particle filters
Pneumatic valves
Gas line:
Reactive gas line: 03 including Destruct
Purge gas line: Ar
High-Flow / Low-Flow purge configuration
Electronic flow controllers and pneumatic valves for various purge lines
Individual pneumatic valves for reactive gas line
Individual downstream pressure controls with electronic mass flow meters for:
(3) reactive gas line and various purge lines
ALD valve block with high-speed switching
ALD valves for reactive gas and various purge lines
ALD valve block temperature-controlled and adapted to reactor lid
Safety configuration: Normally closed
Precursor liquid delivery system:
(2) Liquid precursor lines
Electronic mass flow controller
Pressure controller
Pneumatic valve for solvent line
Liquid flow meters
3-position liquid medium valves for each precursor line
Individual manual separation valves
Electronic mass flow controller
Pressure controller
Pneumatic valve for solvent line
Optional: precursor and solvent tanks
(1) Mist preparator wand, 1.8 liter nominal volume
Single-Injector Tri-Jet liquid precursor evaporation systems:
(2) Contact-less cylinder evaporators
Individually controlled temperature range: 40 C - 250 C
High precision injectors for the liquid precursor lines
Joint Pre-heated carrier gas line
Temperature controlled: 40 C - 230 C
Spare provision: He purge line
Joint run-vent-purge stack
Temperature controlled: 40°C - 230°C
Separate precursor box with room temperature bubbler
Ventilated enclosure with Nitrogen purge line
Smoke detector and ventilation flow sensor integrated in Precursor Box
Single room temperature bubbler for high vapor pressure precursors with TMA
Control valve with pressure indicator switch
Particle filter
Downstream pressure control with electronic mass flow meter
Dual 2/2 way valve for carrier line
Single joint run line with ALD valve
ALD reactor:
Reactor cabinet
Hot wall aluminum reactor chamber, max 220°C.
Showerhead with separation between reactive gas and metal-organic precursor flows
Reactor walls, reactor lid, and showerhead assembly temperature controlled by heat exchanger with thermal liquid
Thermal liquid
Aluminum nitride substrate heater
Closed-loop temperature controlled resistive heater
Wafer transfer lift pin mechanism with vertically movable substrate heater assembly.
Wafer transfer MESC port with pneumatic slit valves
Vacuum system:
Pressure sensors and pressure controllers
Designed for process pressure: up to 10 mbar
Heated exhaust line up to outlet flange on the process module
Throttle valve and check valves
Cooling system:
Type: Julabo
Digital flow meters, temperature transmitters, and manual separator valves for each cooling branch.
Tricent ALD Heat exchanger
One per module required for system operation
For operation with thermal liquid (Thermal H 250)
Maximum operating temperature 220°C.
2008 vintage.
AIXTRON Tricent是一种高性能感应耦合等离子体(ICP)反应器,设计用于将III-V、复合半导体、介电和金属层等多种材料沉积在任何尺寸的基板上。它是一种低压直流电气体流源,工作频率为8-20 mbar,脉冲直接频率为15kHz,功率传递能力高达600 W。Tricent有一个完全封闭的反应室,为所需层在底物上的高效均匀沉积提供了优化的空间。其双频射频发生器和磁场发生器能够在广泛的频率范围内运行,模拟精确的工艺条件。该系统配有真空密封盖、热气阀和灵活的电气连接,而基板支架设计用来支撑和固定不同尺寸和形状的基板。AIXTRON Tricent在层状沉积过程中效率高,具有较高的沉积速率和整体膜均匀性。其温度控制的基板支架保证了室内能量的均匀分布,保证了整个基板上良好的工艺均匀性。Tricent的内部设计还包括快速的气体切换、简化的维护程序以及增强的清洁和冷却能力等功能,在蚀刻和沉积过程中提供了高可重复性和长期稳定性。此外,AIXTRON Tricent通过提供经济高效的自动化和监控要求解决方桉,旨在方便地集成到现有生产线中。它与AIXTRON粒子检测和气体测量系统完全兼容。这种先进的反应堆提供了可靠和易于使用的功能,以产生先进的材料,特征尺寸减小,提高工艺均匀性。
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