二手 SVTA / SVT ASSOCIATES 440 S1 MBE #9230364 待售
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ID: 9230364
晶圆大小: 3"-4"
Molecular Beam Epitaxy (MBE) system, 3"-4"
SVT Silicon MBE epitaxial
OMICRON Electronics included
Method: Thin-film deposition of single crystals
Transistor: Cellular phones & WiFi
Load lock:
Chamber with water cooling
Quick hatch with O-ring seal & CF copper gasket option
GP Model 204 gold seal valve (Roughing line)
Sample heater: 200° C
Heater power supply: 1000 W
Dimension heater control loop
Wafer cassette holder, 8"
(8) MO Wafer holders, 8"
Manual gate valve (VAT) (Between loadlock & intermediate chamber)
HPS Series 421 cold cathode gauge & controller (Wide range)
Cryopump UHV, 6"
Gate valve: Cryopump, 4 1/2" (Pneumatic)
(3) Sorption pumps with plastic dawars, heaters & manual valves
PIBA Venturi pump with manual valve
GP Model 275 convectron gauge with digital controller
Vacuum plumbing for roughing
Intermediate chamber:
(2) Transfer rods: Growth chamber & outgas station
Cassette storage elevator (Manual)
Ion pump 400 1/8 with PERKIN ELMER 1500 digital controller
Sublimator & controller (TSP)
Gate valve: Ion pump, 8" (Pneumatic)
GP Model 307 extended (3) gauge controllers with ionization gauge
10" Gate valve (Manual) between intermediate chamber & outgas station
Rough plumbing with GP 204 gold seal valve
(2) Viewports for docking
Outgas station:
Water cooled chamber with expansion port
Viewport with shutter
Stage
Heater 1100° C with TC
Heater power supply: 1000 W
Dimension control loop
Ion gauge
Cryopump, 8" UHV
Gate valve,10" (Pneumatic) for cryopump
Rough plumbing with GP gold seal valve for chamber
Rough plumbing with GP gold seal valve for cryopump
Growth chamber:
Dia chamber, 24" with water cooling
Sample manipulator with Z-motion & 60 RPM rotation
Passivated graphite heater, 4": 1100°C
Heater power supply: 1000 W
(7) Dimension control loops
Ion pump 400 1/8 with PERKIN ELMER 1500 digital controller
Sublimator & controller: Ion pump (TSP)
VAT Valve, 8" (pneumatic): Ion pump
Cryropump, 8" UHV
Cryropump compressor run (3) UHV pumps, 8"
Gate valve, 10" (pneumatic) for Cryropump
GP Model 307 Ion gauge controller & gauge
(2) Thermionics 156 cc single pocket E-gun with pneumatic activated
soft shutter & water shroud
L-H 4x7cc Pocket E-gun with pneumatic activated soft shutter & water shroud
15 kW E-beam power supply with (3) sweeps
(4) Standard 20cc (K-Cells) effusion cells
(2) High temperature 10cc (K-Cells) effusion cells
(4) Power supplies 1000 W for Std K-cells
(2) Power supplies 1600 W for high temperature K-cells
(6) Water cooled effusion cell shrouds with pneumatic activated soft shutters
(10) Loop dimension multi-loop controllers with relay & CPU interface
SVT Shutter controller
(2) Sentinel III flux sensors & X'tal sensor with additional beam splitter
Sentinel III deposition controller
RHEED System with power supply, shutter, screen, lead window, & controller
Option: VIEETECH 30 key / KIMBALL PHYSICS 20 kev
RGA UTI-l00C System with TEKTRONIX 5111A scope & 5A 15N & 5B1 on plugins
Movable ion gauge: Flux control
Master shutter (Pneumatic)
Rough plumbing & gold seal valves: Cryropump
Bakeout heaters, timer, fans & soft blanket
Viewports & shutters required: Docking & E-guns (Reference port schedule)
(2) Implanter port soft shutters
System upgrade chambers, 8" / Manipulator, stages & valves
(6) PBN STD Crucibles
(2) Hi-temp crucibles
CPU 386/20 MHz IBM Compatible with hardware
Water distribution panel
System console
Rough plumbing with GP gold seal valve for main chamber
Gate valve, 10" (Manual) isolate growth chamber from intermediate chamber.
SVTA/SVT ASSOCIATES 440 S1 MBE(分子束外延)设备是一个先进的沉积平台,用于创建具有极精确纳米级控制的复杂的、超薄膜。该平台通过使用高度聚焦和可调的元素或复合源光束来适应特定的应用,为薄膜沉积提供了极大的灵活性。这种分子束外延(MBE)系统基于先进的磁控管溅射工艺,使其成为先进的薄膜沉积工艺的最先进的外延工具。The440 S1利用先进的磁控管溅射技术和相关的源控制单元实现了最高的薄膜质量和增长动力。该源被设计和供电以实现高度均匀性,而生长速率可以用惰性或反应性气体连续调制,以提高薄膜的性能。MBE能够精确控制薄膜厚度以及整个晶片的厚度剖面,为半导体制造过程中关键层的沉积提供了一个独特的均匀平台。440 S1包括一套外延和表征的强大附件,如光学显微镜、实时厚度光谱、RHEED(反射电子能量损失光谱)和反射成像,用于评估和分析薄膜结构和表面形态。还有一个高温退火模块,用于激活层,以确保最佳的均匀性,结晶性和附着力。此外,440 S1还具有一台快速可靠的机器,可在材料之间进行切换,为特定应用程序创建和优化多层提供了灵活性。440 S1还拥有高效的气体控制工具,提高了反应动力学,进一步增强了均匀性。与源集成的精密气流资产使反应性元素能够沉积,而排气模型则保持超低压力水平,以确保最佳源性能。此外,简单直观的人机界面提供了方便的参数访问和过程控制。SVTA 440 S1 MBE结构和操作先进,设计符合半导体行业的最高标准。该设备非常可靠,适用于太阳能电池、LED、半导体等多种应用的大批量生产。
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