二手 AMAT / APPLIED MATERIALS Centura 5200 Phase II #9233106 待售
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ID: 9233106
晶圆大小: 8"
优质的: 1998
Metal etcher, 8"
Wafer shape: SNNF
Chamber type / Location:
Position A: (D+) Metal DPS+
Position B: (D+) Metal DPS+
Position C: (S+) ASP With enhancements
Position D: (S+) ASP With enhancements
Position E: STD Cool down
Position F: (OA) Orienter
Electrical requirements:
Line frequency: 50 Hz
EMO Guard ring
Smoke detector at controller
Smoke detector at MF
Chamber A / B metal DPS+:
Metal DPS R1 chamber:
Upper chamber body: Anodizing
Electrostatic chuck type: Polyamide ESC
Turbo pump: SEIKO SEIKI STPH 1303C
Upper chamber o-ring: Viton
Dome: Rough
DTCU: E DTCU
Endpoint type: Monochromator
Bias generator: ENI OEM-12B3
Bias match: Standard
Capture ring: STD Polyamide ESC
Source generator: Standard, 2500 W
Slit valve o-ring: Viton
Gate valve: TGV VAT65 Series
Process control: Manometer (0.1 mtorr, 10 torr)
Chamber foreline
With heating jacket
Cathode assy: Single type
BCL3 Gas line block: Heater with watlow
He UPC: MKS 649
Wafer lift cylinder: SMC
Metal ASP+ chamber options:
Process kit: Chuck
O-Ring: Silicon
Applicator: ASP+
Smart match: Tuner 1/4 guide, 2.45 GHZ, 3 kW
Wave guide: Phase MSG isolator
MAGNETRON Head: MKS
Process control: Manometer (10 torr, 100 torr)
GDP Kit: Quartzware
Slit valve o-ring: Viton
Plasma tube o-ring: KALREZ
Generator: AX2115
VDS Heater: VDS Gas line / Final valve heater
Gas delivery options:
VDS Type: Ultra clean
Pallet options:
Valve: FUJIKIN / VERIFLO
Transducer: MILLIPORE / MKS852
Regulator: VERIFLO
Filter: MILLIPORE
Transducer: Display per stick
MFC Type: Unit 8161
Gas panel pallet A / B:
Pallet: 4/6
Gas line configuration:
CL2: 200 SCCM
BCL3: 100 SCCM
N2: 20 SCCM
CHF3: 20 SCCM
O2: 500 SCCM
SF6: 200 SCCM
AR-S: 200 SCCM
(2) Pallet corrosive gas lines
(5) Pallet inert gas lines
(7) Filters
Gas panel pallet C / D:
Pallet: 0/4
Gas line configuration:
O2: 5 SLM
N2-S: 1 SLM
(3) Pallet inert gas lines
(3) Filters
Gas panel facilities: Top feed multi line drop
Gas panel exhaust: Top
Gas panel controller: VME I
Mainframe:
Facilities type: Regulated
Facilities orientation: Mainframe facilities back connection
Loadlock / Cassette options:
Loadlock type: WBLL With autorotation
Loadlock platform: UNIVERSAL
Loadlock cover finish: Anti static painted
Loadlock slit valve o-ring type: Viton
Wafer mapping: Enhanced
Integrated cassette sensor
Transfer chamber options:
Transfer chamber manual LID hoist
Robot type: CENTURA VHP+
Robot blade: Roughened AL blade
Wafer on blade detector
Loadlock: Bottom vent
Front panel: Anti static painted
Signal light tower
System monitors:
Monitor type: CRT Monitor
AC Rack:
GFI: 30 mAMP
Type: AC Gen rack, 84"
Controller facility interface: Remote UPS interface
Generator Rack:
Cooling water: Manifold type
Manifold facilities: Compression tube fittings, 3/4"
Heat exchanger:
H2000 DI EG Cathode
H2000 DI EG Wall
H2000 DI EG ASP Wall
Heat exchanger interface
Pump interface
1998 vintage.
AMAT/APPLIED MATERIALS Centura 5200 Phase II是一种干蚀刻/灰化设备,专为深硅蚀刻/灰化和光掩模修复而设计。该系统提供了出色的蚀刻/灰分均匀性,并在不同材料之间实现了很高的选择性。AMAT Centura 5200 Phase II可以处理直径达8英寸的晶片,蚀刻/冲洗时间长达10分钟。APPLIED MATERIALS Centura 5200 Phase II是一个单晶圆处理器,旨在提供各种晶圆材料的高精度蚀刻和灰化。该单元包括一个淋浴头RF(射频)源、气体输送机、RF发生器、数字MFC(质量流控制器)和专属的Ultra-Shear气体夹带工艺。热惰性气体与工艺气体溷合,以增加蚀刻/灰化率。射频发电机采用了创新的双频设计,提供了广泛的功率范围,并允许最佳蚀刻/灰度配方。Centura 5200 Phase II提供了高级蚀刻/冲洗模块,可实现更高的精度和均匀性。该模块利用线性运动级和双侧载荷锁在真空室之间传输晶片。腔室包含平面电感、气体输送工具和射频耦合技术,用于将射频功率直接输送到晶片。腔体配有坚固耐振的部件,以确保连续蚀刻/灰化的可靠操作。AMAT/APPLICED MATERIALS Centura 5200 Phase II资产通过OES(光学端点检测)提供非常严格的端点控制,并监控被监控的参数,如蚀刻速率、轮廓深度和蚀刻均匀性。该模型还具有强大的蚀刻工艺监视器,每隔几秒精确计算一次蚀刻速率,并允许更高的工艺精度。AMAT Centura 5200 Phase II还实现了先进的光掩模修复功能,如拆除和更换阵列特征。APPLIED MATERIALS Centura 5200 Phase II提供模块化设计,便于维护和升级。该设备利用简单的图形用户界面来配置和操作系统。此外,该设备还能够从远程位置或通过USB端口下载配方。这样可以方便地将配方优化或配方转移到其他系统。总体而言,Centura 5200 Phase II是一款用途广泛、先进的干蚀刻/灰化机,在不同的材料之间提供了出色的均匀性和高选择性,并提供了一系列功能,可以优化配方和光掩模修复。
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