二手 AMAT / APPLIED MATERIALS Centura 5200 Phase II #9233106 待售

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ID: 9233106
晶圆大小: 8"
优质的: 1998
Metal etcher, 8" Wafer shape: SNNF Chamber type / Location: Position A: (D+) Metal DPS+ Position B: (D+) Metal DPS+ Position C: (S+) ASP With enhancements Position D: (S+) ASP With enhancements Position E: STD Cool down Position F: (OA) Orienter Electrical requirements: Line frequency: 50 Hz EMO Guard ring Smoke detector at controller Smoke detector at MF Chamber A / B metal DPS+: Metal DPS R1 chamber: Upper chamber body: Anodizing Electrostatic chuck type: Polyamide ESC Turbo pump: SEIKO SEIKI STPH 1303C Upper chamber o-ring: Viton Dome: Rough DTCU: E DTCU Endpoint type: Monochromator Bias generator: ENI OEM-12B3 Bias match: Standard Capture ring: STD Polyamide ESC Source generator: Standard, 2500 W Slit valve o-ring: Viton Gate valve: TGV VAT65 Series Process control: Manometer (0.1 mtorr, 10 torr) Chamber foreline With heating jacket Cathode assy: Single type BCL3 Gas line block: Heater with watlow He UPC: MKS 649 Wafer lift cylinder: SMC Metal ASP+ chamber options: Process kit: Chuck O-Ring: Silicon Applicator: ASP+ Smart match: Tuner 1/4 guide, 2.45 GHZ, 3 kW Wave guide: Phase MSG isolator MAGNETRON Head: MKS Process control: Manometer (10 torr, 100 torr) GDP Kit: Quartzware Slit valve o-ring: Viton Plasma tube o-ring: KALREZ Generator: AX2115 VDS Heater: VDS Gas line / Final valve heater Gas delivery options: VDS Type: Ultra clean Pallet options: Valve: FUJIKIN / VERIFLO Transducer: MILLIPORE / MKS852 Regulator: VERIFLO Filter: MILLIPORE Transducer: Display per stick MFC Type: Unit 8161 Gas panel pallet A / B: Pallet: 4/6 Gas line configuration: CL2: 200 SCCM BCL3: 100 SCCM N2: 20 SCCM CHF3: 20 SCCM O2: 500 SCCM SF6: 200 SCCM AR-S: 200 SCCM (2) Pallet corrosive gas lines (5) Pallet inert gas lines (7) Filters Gas panel pallet C / D: Pallet: 0/4 Gas line configuration: O2: 5 SLM N2-S: 1 SLM (3) Pallet inert gas lines (3) Filters Gas panel facilities: Top feed multi line drop Gas panel exhaust: Top Gas panel controller: VME I Mainframe: Facilities type: Regulated Facilities orientation: Mainframe facilities back connection Loadlock / Cassette options: Loadlock type: WBLL With autorotation Loadlock platform: UNIVERSAL Loadlock cover finish: Anti static painted Loadlock slit valve o-ring type: Viton Wafer mapping: Enhanced Integrated cassette sensor Transfer chamber options: Transfer chamber manual LID hoist Robot type: CENTURA VHP+ Robot blade: Roughened AL blade Wafer on blade detector Loadlock: Bottom vent Front panel: Anti static painted Signal light tower System monitors: Monitor type: CRT Monitor AC Rack: GFI: 30 mAMP Type: AC Gen rack, 84" Controller facility interface: Remote UPS interface Generator Rack: Cooling water: Manifold type Manifold facilities: Compression tube fittings, 3/4" Heat exchanger: H2000 DI EG Cathode H2000 DI EG Wall H2000 DI EG ASP Wall Heat exchanger interface Pump interface 1998 vintage.
AMAT/APPLIED MATERIALS Centura 5200 Phase II是一种干蚀刻/灰化设备,专为深硅蚀刻/灰化和光掩模修复而设计。该系统提供了出色的蚀刻/灰分均匀性,并在不同材料之间实现了很高的选择性。AMAT Centura 5200 Phase II可以处理直径达8英寸的晶片,蚀刻/冲洗时间长达10分钟。APPLIED MATERIALS Centura 5200 Phase II是一个单晶圆处理器,旨在提供各种晶圆材料的高精度蚀刻和灰化。该单元包括一个淋浴头RF(射频)源、气体输送机、RF发生器、数字MFC(质量流控制器)和专属的Ultra-Shear气体夹带工艺。热惰性气体与工艺气体溷合,以增加蚀刻/灰化率。射频发电机采用了创新的双频设计,提供了广泛的功率范围,并允许最佳蚀刻/灰度配方。Centura 5200 Phase II提供了高级蚀刻/冲洗模块,可实现更高的精度和均匀性。该模块利用线性运动级和双侧载荷锁在真空室之间传输晶片。腔室包含平面电感、气体输送工具和射频耦合技术,用于将射频功率直接输送到晶片。腔体配有坚固耐振的部件,以确保连续蚀刻/灰化的可靠操作。AMAT/APPLICED MATERIALS Centura 5200 Phase II资产通过OES(光学端点检测)提供非常严格的端点控制,并监控被监控的参数,如蚀刻速率、轮廓深度和蚀刻均匀性。该模型还具有强大的蚀刻工艺监视器,每隔几秒精确计算一次蚀刻速率,并允许更高的工艺精度。AMAT Centura 5200 Phase II还实现了先进的光掩模修复功能,如拆除和更换阵列特征。APPLIED MATERIALS Centura 5200 Phase II提供模块化设计,便于维护和升级。该设备利用简单的图形用户界面来配置和操作系统。此外,该设备还能够从远程位置或通过USB端口下载配方。这样可以方便地将配方优化或配方转移到其他系统。总体而言,Centura 5200 Phase II是一款用途广泛、先进的干蚀刻/灰化机,在不同的材料之间提供了出色的均匀性和高选择性,并提供了一系列功能,可以优化配方和光掩模修复。
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