二手 TEL / TOKYO ELECTRON Formula-1S-H #293654963 待售
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ID: 293654963
优质的: 2005
Diffusion furnace
Control system
Heater temperature: 600°C-900°C
Load port
FIMS
Wafer transfer
Boat elevator / Seal cap rotation
Auto shutter
Heater model
N2 Load lock
Boat operation
Process: LPCVD
Si SEMI STD-Notch, 12"
Furnace temperature controller: M780
HTR
Power box
Carrier transfer
Mechanical driver
Exhaust box
Front and rear upper cover
Final valve box
Gas flow chart
O2 Analyzer
Hard Disk Drive (HDD)
Does not include HCT
User interface:
MMI and gas flowchart: Gas box and front operation panel installed
Pressure display Unit: Mpa / Torr
Carrier type: FOUP / 25slots SEMI STD
Fork meterial: Al203 and PEEK
W/T Type: 1+4 Edge grip
16-Carrier stage capacity
Wafer notch aligner
RCU
UPS
Power distribution system:
3-Phase connection type: Star connection
Single-Phase connection: Grounded
Single-Phase voltage
Gas distribution system:
FUJIKIN Integrated Gas System (IGS)
IGS Final filter, regulator: MFC Z500 Type
MKS Capacitance manometer vacuum gage - press monitor (133 Kpa)
Power supply: 400 VAC, 3 Phase, 50/60 Hz
2005 vintage.
TEL/TOKYO ELECTRON Formula-1S-H是为需要快速、精确和精细蚀刻工艺的应用而设计的蚀刻器/asher。设备采用等离子体源、蚀刻气体、受控功率和高频(RF)电力的组合,打造出完美的蚀刻轮廓。蚀刻过程从确保干净、精确的平面基板开始。这样做是为了确保蚀刻过程在基材中产生均匀的蚀刻结果。接下来,将蚀刻气体注入系统腔,由独立的射频天线截面与基板分离。该单元然后将射频能量施加到腔室,产生一个由带电粒子和与底物相互作用的反应性物质组成的等离子体。然后由蚀刻面积、蚀刻气体流量和功率强度等参数组合控制蚀刻速率。TEL Formula-1S-H配有精密蚀刻室,适合蚀刻高长宽比(HAR)结构,同时也保证了垂直侵蚀的低轮廓。这使得即使是最复杂的三维结构也有可能定义出高精度。此外,该机具有多种人性化特点,如自动晶片识别、车载化学管理工具、浓缩化学维护和辅助程序指南。TOKYO ELECTRON Formula-1S-H具有很高的通量率,让它在较短的製程时间内产生高品质的蚀刻结果。该资产还被设计为可靠,因为它被设计为能够承受高功率射频场和极端温度。所有这些功能使其成为需要快速、精确蚀刻的蚀刻应用程序的理想选择。
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