二手 TEL / TOKYO ELECTRON Telformula ALD High-K #9282599 待售

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ID: 9282599
晶圆大小: 12"
优质的: 2015
Vertical LPCVD Furnace, 12" VCM-5D-012L Heater Maximum operating temperature: 300°C ART Control N2 Load lock Wafer type: Si SEMI STD-Notch (50) Production wafers Loading area light: White (LED) RCU Duct length FNC to RCU: 20m Chemical prefilter hydrocarb Chemical prefilter location: FNC Top Dry pumps missing Wafer / Carrier handler: Carrier type: FOUP / 25-Slots SEMI STD ENTEGRIS A300 FOUP Carrier stage capacity: 10 Info pad A,B: Pin Info pad C,D: Pin Fork material: Al2O3 Furnace facilities: Furnace exhaust connection point: Top connection Cooling water connection point: Bottom connection Air intake point: Top Gas distribution system: IGS Type: IGS 1.5" W-Seal rail-mount FUJIKIN IGS System Tubing bends: <90°C PALL IGS Final filter IGS Regulator: CKD HORIBA STEC IGS MFC Digital HORIBA SEC-G111 IGS MFC For low flow N2 purge IGS Press transducer: Nagano HORIBA STEC LSC-F530 Liquid source vapor system For ZAC HORIBA STEC TL-2014 Auto refill system TMA: AIR LEQUIDE / CANDI Auto refill system ZAC: AIR LEQUIDE / CANDI OP-500H-RE1 Ozone delivery system Injector O-Ring material: DU353 Gas facilities: Incoming gas connection point: Bottom connection Gas VENT Connection point: Bottom connection Exhaust VENT Connection point: Bottom connection Gas unit exhaust connection point: Bottom connection Exhaust: Vacuum gauge pressure controller: MKS Capacitance manometer (Hot) Vacuum gauge press monitor 133 kpa: MKS Capacitance manometer (Hot) Vacuum gauge pump monitor: MKS Capacitance manometer (Hot) CKD VEC-VH8-X0110 Main valve VYX-0279-CONT Controller EDWARDS iXH-1820T Pump EDWARDS TPU Abatement system Type: Burning type Exhaust box: Wide type (1200mm) Exhaust O-Ring material: DU353 FNC Power box: 30m FNC RCU: 30m Power box RCU: 30m Power box pump unit: 30m Power box refill system: 30m Host communications: Comply with GJG Equipment host I/F Connection: Power box top HSMS (10Base-T/100Base-TX) Ingenio OHT Capability Load port operation: Lower and upper PIO I/F Location: FNC Top PIO: TEL HOKUYO DMS-HB1-Z PIO Carrier ID Reader writer type: RF CIDRW Lower L/P: Read CIDRW Upper L/P: Read CIDRW FIMS: Read / Write CIDRW: HOKUYO DMS-HB1-Z Series CIDRW Tag orientation: Vertical Customized management signals: PT / Water Interface: Signal tower model: LCE Series Signal tower colors: Red / Blue / Yellow / Green Signal tower location: Front for (10) Stockers (Left) Front operation panel MMI and gas flowchart: Gas box and front operation panel Installed Indicator type: HOKUYO DMS-HB1-Z series Operator switch: Operator access / White cover with orange light Pressure display unit: MPa / Torr Cabinet Exhaust pressure display: Pa Power: Power cable input entrance loc: Power box top Power supply: 3 Phase connection type: Star connection 200/400 VAC, 60 Hz, 3 Phase 2015 vintage.
TEL/TOKYO ELECTRON TELFORMULA ALD High-K是为电子设备的先进製造而设计的最先进的蚀刻器/asher。这一设备的设计目的是为高达+/-15A的精确度提供透明薄膜的均匀蚀刻和灰度处理,提供卓越的制造性能。TEL Telformula ALD High-K的占地面积减少,高度仅为21厘米,与其他asher相比,它具有卓越的可用性,非常适合需要高精度蚀刻的应用。TOKYO ELECTRON TELFORMULA ALD High-K拥有先进的CIU(Chamber Interface Unit),使其在广泛的工艺范围内具有高蚀刻和灰化能力。通过将低压、高温和低热预算相结合,该装置能够以可重复和可控的方式创建复杂的结构和特征,提供优异的效果。此外,Telformula ALD High-K能够使用注塑面罩生成更复杂的图桉,并能够利用线条和空间几何形状生成更精细的特征。TEL/TOKYO ELECTRON TELFORMULA ALD High-K具有可调节共振频率的整合式脉冲等离子体模式,增加蚀刻速率,同时减少整体蚀刻时间。这为各种薄膜和应用程序提供了更快的周转时间。此外,TEL Telformula ALD High-K还具有全自动机器人晶片加载和质量控制系统,可提高过程控制和可重复性。TOKYO ELECTRON TELFORMULA ALD High-K具有耐用性和可靠性,对于要求最苛刻的应用,每年只需要定期维护一次。该装置还设计为与金属、合金、陶瓷等多种材料兼容,为工艺要求不同的制造商提供了更多的通用性。总体而言,Telformula ALD High-K是一款可靠、精确的蚀刻器/asher,专为各种现代电子设备设计,具有卓越的工艺控制功能。它提供多种蚀刻和灰化模式,能够调整谐振频率,从而改进过程控制和周转时间。TEL/TOKYO ELECTRON TELFORMULA ALD High-K被设计为耐用可靠,并提供与多种材料的兼容性,提供制造商生产更大的通用性。
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