二手 TEL / TOKYO ELECTRON Telius SP 308QS #9213296 待售

Deep trench silicon etchers 12" FOUP (4) Chambers (SCCM) (5) Loader ports Load locker modules GEW3040 and NOVA50A 40MHz and 3.2MHz dual frequency source ESD Chuck Temperature control RF Application method Process: 80um deep 90nm wide via silicon etch Chamber: Aluminum alloy chamber Material: Aluminum alloy (A6061) Surface finishing: Hard sulfuric acid anodizing RF Application method: Apply upper RF to lower electrode Discharge method: SCCM Type Temperature control: Upper electrode: Temperature control by heater and cooling water Lower electrode: Temperature control by circulating coolant Side wall: Temperature control by heater Upper electrode: Quartz cover or aluminum alloy (A6061) with hard sulfuric acid anodizing Shield ring Lower electrode: Ceramics electro static chuck Thermometer Wafer holding method: Electrostatic chuck(φ300) mechanism Lifter: Resin Focus ring: Qz Exhaust plate: Aluminum alloy with hard sulfuric acid anodizing Insulation ring: Quartz cover or aluminum alloy (A6061) with hard sulfuric acid anodizing Distance between electrodes: 30～35 mm Magnet: Intensity: 170G (center) Rotation: 20± 1rpm Pressure monitor: (3) Types He B.P unit: Cooling gas for wafer back Pressure switch: PCV (STEC) Number of line: (2) Lines Control range of pressure: (Center / Edge): 0~7980Pa(0~60Torr) He monitor: Leakage monitor Detection of valve open / close: Valve ON/OFF sensor End point detection: SE2000 Confirmation of luminescence Window: Orifice (Quartz) Deposition shield: Removable depo-shield Material: Quartz Shutter: Plate: Aluminium alloy with hard sulfuric anodizing Drive: Air cylinder Final valve: Diaphragm type mega-one (Fujikin)　　　　　　　　　　　　　　　　　　 Manifold: Aluminium alloy with hard sulfuric anodizing O-ring for chamber: Chemratz Specifications for performance: Ultimate vacuum: 0.0133 Pa (7.5*10-2 mTorr) or less Leak back: 0.133 Pa/min (1 mTorr/min) or less 2007 vintage.