二手 YES / GLEN R3 #9251749 待售
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ID: 9251749
优质的: 1994
Plasma cleaner
Low frequency
Mass Flow Controller (MFC)
N2 Flow rate: 1.7 SCFM
Process gas flow rate: 20-50 SCCM
Chamber material: 6061-T6 Aluminum
RF Plasma power: 0 - 500 W at 550 VAC
Nitrogen consumption: 0 SCFM idle, 1.7 SCF
Reactant gas consumption: 0 SCFM Idle, 150 SCC
KF 40 Vacuum plumbing
Clean room capability: Class 10
Compliance: SEMI S2
Touch screen interface
Analog MFC control and monitoring
Thermocouple monitoring for etch uniformity
Safety factors: Integral RF and pressure interlocks
TCP/IP Port
Self-diagnostic program
Constant real-time display
Audible and visual cycle complete indicators
Audible and visual indication of incorrect process with diagnostics display
Vacuum sensor: 0-1000 Torr
With (2) trip points
Load capacity:
Up to 4 active plasma areas: 15.13" x 15.39"
Operational modes:
RIE
Downstream electron-free
Active ion trap
Grounded ion trap
Measurements:
Interior chamber dimensions: 450 x 450 x 300 mm
Chamber process area: 931 in² or 233 in²
Power supply: 230 V, 20 Amps, 50/60 Hz, Single phase
1994 vintage.
YES/GLEN R3是一种通过蚀刻和长宽比测量来提高硅效率的蚀刻器/asher。其设计容量可处理15mm x 15mm,最多可处理8英寸晶圆。该设备有一个精密纺纱片模具(PSTD)和一个自动精密弹射系统。这种双源流程有助于提高流程能力和可变性。封闭的4英寸真空外壳保持了工艺的重复性,并与传统的Multi-Boron Plant Plus (MBI+)单元配合,提供样品输送和执行蚀刻。PDT通过其自动扫描头提供单面平面场和多点测量功能。它采用了独特的不锈钢刀口口和定制卡盘,以提供非常低的失真和准确性。PSTD还针对隔离蚀刻和长宽比测量进行了优化。它具有组合的双晶圆温度控制机、气体分配和气体提升控制.这与高级工艺控制以及用于监视和操作蚀刻参数的软件相辅相成,从而产生高工艺可重复性、可重复的残留物和长宽比测量。YES R 3还具有无损和破坏性阵列蚀刻测量技术的组合。提供了双面平场分析(DSFP)和多点分析(MPP)功能,并辅以广泛的可变蚀刻速率和最小洗涤时间。DSFP和MPP测量极易重复,可提供快速可靠的过程信息,以帮助优化和故障排除工作。这种蚀刻器是一种可靠可靠的工具,设计时改进了工艺参数,提高了工艺吞吐量,提高了通量稳定性,提高了生产率。
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