二手 EATON NOVA / AXCELIS GSD 200E2 #9021872 待售
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ID: 9021872
晶圆大小: 6"-8"
HC implanter, 6"-8"
180 KeV
Line power:
Input power: 208 V, 3 phase, 60 Hz, 92 A, 33 kVA, I/P breaker: 125 A
Output power: 180 KeV, 20 mA
Endstation module:
Mini-environment: Synetics
ATM robot: SEN
Notch / flat finder: flat
Dummy cassette: 2 in 1
Load buffer: 1
Vacuum cassette: domed pin
Cassette table: 4
Load port interface: manual
Beam profile oscilloscope: Tektronix TDS210
Cell controller / version: MVME 177-03
Load lock type: GSD 100/200, HE
Main SUN computer: Sparc Station 5
Second SUN computer: Spare 5
Second SUN monitor: Sun
Tape reader: n/a
Printer: HP
Process module:
Disk: none
Faraday flag: Y (no burn-through sensor)
Electron / plasma shower: secondary electron
Plasma shower PS: EMI EMS series
Bias aperture: Y
Shower gas panel: Y (Ar)
Ar / Xe bleed MFC: Unit 5 SCCM
In-vac arm: Y
Wafer holder: Y
Pedestal: Y
Gyro / angle: NF-GSD 100, Quad ± 11 deg
Linear drive: Y
Rotary drive: direct drive
HYT: no
Beamline module:
HV power supply: Advance HV
HV stack: OL8000/104/05, 100 kV
Prost accel. volt: OL800/104/05, 100 kV
Extraction suppression PS: Glassman, m/n: PS/NV-15NN33
AMU: BSL
AMU PS: EMI EMS 40-150
Hall probe: AMU
Max extraction voltage: 90 KeV, max acc. voltage: 90 KeV
Beam profiler hole: extended Y-scan
Decel. funcion: n/a
Beamline purge kit: Y
Beamline turbo: Y
Source module:
Source head: ELS without vaporizer
Filament PS: EMS 10-60
Arc PS: EMS 150-7
Cathode PS: Y
Vaporizer PS: present
Source magnet: std
Source magnet PS: EMS 25-25
Source bushing: std (orange)
Extraction assembly: LE-VAE, 33 type
Selectable resolving aperture: Y
Source ISO transformer: dry
Source injection kit: MKS 1150 vapor source MFC
Source housing exhaust valve: Y
Gas box module:
Gas box type: modular
Gas loop #1: Ar, HP (external supply)
Gas loop #2: BF3, SDS (fitting: 1/4" VCR)
Gas loop #3: AsH3, SDS (fitting: 1/2" VCR)
Gas loop #4: PH3, SDS (fitting: 1/2" VCR)
Loop #1 MFC: MKS, m/n 1179A-14493, 10 sccm, N2, gold finger conn.
Loop #2 MFC: MKS, m/n 1640A-011, 5 sccm, AsH3, D-15 conn.
Loop #3 MFC: MKS, m/n 1640A-011, 5 sccm, AsH3, D-15 conn.
Loop #4 MFC: MKS, m/n 1640A-011, 5 sccm, AsH3, D-15 conn.
Vacuum system:
P1 / source turbo: Seiko Seiki, STP-A2203C
P8 turbo: Leybold 1000C
P3 / V3 cryo pump: CTI-10
P9 / disk cryo pump: n/a (flange ready)
RP2: Ebara A70W, 200-220 V, 3 phase, 50/60 Hz, 29.5 A
IG1: glass, G-75
PIG1: n/a
IG2: glass, G-75
IG3: glass, G-75
IG4: n/a
IG controller: GP-307
Safety options:
VESDA: n/a
Smoke detector: Y
CES options: n/a
Others:
Enclosures: OK
Ground bars: 5
SECS / GEM function: GEM
SPC function: yes
Dose controller PComp. algorithm type: standard PComp.
Crated
1998 vintage.
EATON NOVA/AXCELIS GSD 200E2是一种离子植入器和监视器。它被设计用于半导体制造设施的离子植入过程。此过程用于修改不同离子的不同材料,以在材料中产生不同的性质或特征,例如在硅材料中添加杂质掺杂原子以获得专门的电子性质。AXCELIS GSD 200E-2利用OptiCap溷合光束成形技术和IonControl SmartScan离子束输送设备等专有组件来确保植入过程中的最高精度和准确性。这对于确保生成的材料具有所需的属性和特征至关重要。EATON NOVA GSD 200 E2还使用了一系列传感器来监测植入室中的颗粒物污染物,以及用于跟踪系统性能和诊断。这对于确保植入过程针对最终材料的最高质量水平进行优化非常重要。EATON NOVA GSD 200E2单元由几个组件组成,包括离子源、植入室、真空泵机、RF加速、高压工具、离子控制控制台和高参数器控制资产。离子源负责为植入过程产生离子,而植入室则容纳这些离子,并有助于将其加速到适当的能级。真空泵送模型负责为持续植入创造适当的真空环境。射频加速设备将离子提升到所需的能量状态进行植入。高压系统提供这些过程所需的电力。离子控制控制台允许操作员控制植入过程,而高参数控制单元则可以监视植入过程和其他传感器。此外,EATON NOVA GSD 200E-2还配备了一个集成的被动等离子体中和室,从而无需单独的装置来中和植入室。这一特性有助于确保实现更高水平的腔室稳定性,并减少因工艺而受到污染的可能性。EATON NOVA/AXCELIS GSD 200E-2是一种先进的离子植入器和监控器,它对于确保植入过程中达到最高精度和准确度是至关重要的,并且所得到的材料具有所需的性能。这就是为什么它被用于全球许多半导体制造设施的原因。
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