二手 VEECO Gen II #9107591 待售

製造商
VEECO
模型
Gen II
ID: 9107591
MBE System Chamber with (8) source flange size, 2.75” MBE Components: RHEED System Sample manipulator with flux monitor QMS Head Glove box Pumps: Cryo pump Lon pump Turbo pump (2) Ion pumps: Main chamber (600 l/m) Buffer chamber (150 l/m) with (2) power supplies (2) Ti-Sublimation pumps With power supplies in the base of the main chamber Manipulator, 2" With servo motors for rotation Position setting Control unit Heater power supply Thermo-couple controller Beam flux Monitor and controller (2) Ion gauges: With (2) power supplies and controllers Main chamber Load lock Load lock for 6 wafers With heater for pre bake out with its power supply Temperature controller Electrical distribution panel Bake out panels with electrical connections Eight shutters with their control units Utility distribution box for water, air, N2 QMS, Power supply & display unit Operating system and computer (6) Sample holders Baffles head for main chamber turbo pump Gaskets silver coated copper gaskets Mixing manifold With (2) leak valves and tubing for gas interceptor Sulfur automatic valved cracker with: (2) Temperature zones 100 CC Quartz crucible (2) Power supplies (2) Temperature controllers Servo motor and controller and cable Oxygen plasma source with: RF Power supply Matching unit Leak valve Water flow meter and filter High temperature effusion cell with: Temperature zone up to: 2000°C 10 CC Crucible Power supply & temperature controller Low temperature effusion cell with: (2) Temperature zones (Base and tip) 25 CC PBN Crucible (2) Power supplies (2) Temperature controllers Gas injector with: Single heater Power supply Temperature controller and display Mixed manifold with two leak valves and tubing Options: QCM Integrated With machine for film thickness monitor RHEED System With 6" phosphorous screen and detector and camera E-beam gun with power supply and control unit.
VARIAN/VEECO GEN II分子束外延(MBE)设备是一种高度先进的多用户沉积系统,用于掺杂和沉积各种半导体材料。这种最先进的MBE装置能够精确控制沉积环境,从而实现高质量的层,具有极好的可重复性。这台机器允许沉积高质量、均匀的半导体材料层,如砷化氙和砷化氘。沉积过程在真空室中进行,在真空室中,要沉积的基板放在加热的支架上。凯撒制造的三种喷射细胞与工具一起使用;一个砷、一个移植物,以及一个移植物。这三个单元的组合使用户可以灵活地创建复杂和特殊的薄膜结构。MBE资产的底压维持在4-6 x 10-7 mbar,并采用单独的负载锁定模型进一步降低压力,然后再插入真空室。此外,该设备还包含一个热氧化装置、一个臭氧发生器和两条氮管线,以协助表面制备和生长增强。基板支架采用电加热,用一系列热电偶控制温度,允许样品所有区域温度均匀,从而为薄膜沉积提供精确控制。预置温度在200 K至1,000 K之间。此外,VEECO GEN II设备配备了最先进的软件包,为控制源排放和沉积过程提供了多种有用的功能。该软件包括一套用于模拟增长过程、定义层结构和执行各种参数计算的综合工具。使用强大的参数化优化功能,用户还可以开发其薄膜结构的详细模拟,使他们能够最大限度地提高样品的性能。它还允许用户创建图形用户界面,以便为他们提供设置和监控实验的便捷方式。VARIAN GEN II MBE系统的设计满足了广泛的科学和工业要求,使用户能够将其研究应用提升到一个新的水平。这个先进的单元能够产生高质量的结果,并提供了灵活分配不同的材料,原子按原子,以便创建复杂的薄膜结构。
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