二手 VEECO Gen II #9107591 待售
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ID: 9107591
MBE System
Chamber with (8) source flange size, 2.75”
MBE Components:
RHEED System
Sample manipulator with flux monitor
QMS Head
Glove box
Pumps:
Cryo pump
Lon pump
Turbo pump
(2) Ion pumps:
Main chamber (600 l/m)
Buffer chamber (150 l/m) with (2) power supplies
(2) Ti-Sublimation pumps
With power supplies in the base of the main chamber
Manipulator, 2"
With servo motors for rotation
Position setting
Control unit
Heater power supply
Thermo-couple controller
Beam flux
Monitor and controller
(2) Ion gauges:
With (2) power supplies and controllers
Main chamber
Load lock
Load lock for 6 wafers
With heater for pre bake out with its power supply
Temperature controller
Electrical distribution panel
Bake out panels with electrical connections
Eight shutters with their control units
Utility distribution box for water, air, N2
QMS, Power supply & display unit
Operating system and computer
(6) Sample holders
Baffles head for main chamber turbo pump
Gaskets silver coated copper gaskets
Mixing manifold
With (2) leak valves and tubing for gas interceptor
Sulfur automatic valved cracker with:
(2) Temperature zones
100 CC Quartz crucible
(2) Power supplies
(2) Temperature controllers
Servo motor and controller and cable
Oxygen plasma source with:
RF Power supply
Matching unit
Leak valve
Water flow meter and filter
High temperature effusion cell with:
Temperature zone up to: 2000°C
10 CC Crucible
Power supply & temperature controller
Low temperature effusion cell with:
(2) Temperature zones (Base and tip)
25 CC PBN Crucible
(2) Power supplies
(2) Temperature controllers
Gas injector with:
Single heater
Power supply
Temperature controller and display
Mixed manifold with two leak valves and tubing
Options:
QCM Integrated
With machine for film thickness monitor
RHEED System
With 6" phosphorous screen and detector and camera
E-beam gun with power supply and control unit.
VARIAN/VEECO GEN II分子束外延(MBE)设备是一种高度先进的多用户沉积系统,用于掺杂和沉积各种半导体材料。这种最先进的MBE装置能够精确控制沉积环境,从而实现高质量的层,具有极好的可重复性。这台机器允许沉积高质量、均匀的半导体材料层,如砷化氙和砷化氘。沉积过程在真空室中进行,在真空室中,要沉积的基板放在加热的支架上。凯撒制造的三种喷射细胞与工具一起使用;一个砷、一个移植物,以及一个移植物。这三个单元的组合使用户可以灵活地创建复杂和特殊的薄膜结构。MBE资产的底压维持在4-6 x 10-7 mbar,并采用单独的负载锁定模型进一步降低压力,然后再插入真空室。此外,该设备还包含一个热氧化装置、一个臭氧发生器和两条氮管线,以协助表面制备和生长增强。基板支架采用电加热,用一系列热电偶控制温度,允许样品所有区域温度均匀,从而为薄膜沉积提供精确控制。预置温度在200 K至1,000 K之间。此外,VEECO GEN II设备配备了最先进的软件包,为控制源排放和沉积过程提供了多种有用的功能。该软件包括一套用于模拟增长过程、定义层结构和执行各种参数计算的综合工具。使用强大的参数化优化功能,用户还可以开发其薄膜结构的详细模拟,使他们能够最大限度地提高样品的性能。它还允许用户创建图形用户界面,以便为他们提供设置和监控实验的便捷方式。VARIAN GEN II MBE系统的设计满足了广泛的科学和工业要求,使用户能够将其研究应用提升到一个新的水平。这个先进的单元能够产生高质量的结果,并提供了灵活分配不同的材料,原子按原子,以便创建复杂的薄膜结构。
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