二手 VEECO Gen II #9194612 待售
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ID: 9194612
晶圆大小: 3"
MBE Growth system, 3"
AlGaAs Laser
InGaAsP
Vacuum:
Growth chamber (GC)
Triode ion pump: 400 l/sec
Buffer chamber (BC)
Triode ion pump: 200 l/sec
(2) TSP Controllers
Loadlock chamber (LC)
(100) CTI Cryotor cryopumps
(2) Vacshorption pumps
Ventury pump
In situ and calibration tools:
RHEED System: 0-10 keV
RHEED Oscillation growth rate calibration system
Cells:
EPI
Valved cracker with valved controller
Cable
Riber three zone
P Valved cracker with valve controller
Power supply
(3) 400g Sumo cells Ga, In, Al
(2) Dopont cells
Dual electronic equipment rack, 19"
(12) Solenson DC power supplies
2704 Dual channel
Eurotherm controller
Substrate and heated station
(2) DC Power supplies
Substrate heater
Heated station
Other tools:
Ircon optical pyrometer
Growth chamber and beam flux
(2) GP Ion gauge controllers
Buffer and loadlock chamber
RHEED Power supply
RGA Power supply unit
TEK Scope
Riber P valved cracker valve controller
Riber P cracker power supply
Pyrometer port heated
Substrate manipulator controller
Loadlock chamber
Lamp power and controller
AGILENT / HP / HEWLETT-PACKARD / KEYSIGHT Chart record mounted
RHEED Oscillation recording
Trolley for substrate handling.
VARIAN/VEECO GEN II分子束外延(MBE)设备是用于高质量半导体材料研发的突破性技术。它为这些设备的生产提供了卓越的控制水平、精度和准确性,以确保最佳性能和可靠性。该系统包括用于材料掺杂、沉积和结构生长的VEECO GEN II MBE处理器。该处理器旨在实现超高真空环境,并运行各种基板和源配置。该单元还包括可选的AE VEECO长体源,它提供高功率和出色的分子束均匀性,允许精确精确的MBE结果。包括以下mainunit组件:1.真空室-主室设计用于在超高真空环境下工作,使材料层的沉积和生长具有极好的均匀性和雾化性。2.底物来源-根据所需的材料和标准(结晶/无定形等),有若干来源。为了提高准确性,可以使用可选的参考和目标源来优化增长级别。3.源配置-源配置包括离子源、电子束源、反应源和嵌入源,以适应各种MBE过程。4.工艺控制-可变速率工艺控制允许对基板沉积或生长速率进行精确调整。可选的Autotune模块可用于改进过程控制以及提高生产效率和节省成本。5.样品对齐-样品对齐机为晶片及其层提供精确和可重复的定位,以实现最佳的均匀性和准确性。6.真空监测-该工具使用原位湿度计和沉积计、分析仪和测量仪监测压力、温度和残留气体的水平。VARIAN GEN II MBE资产提供用户友好的设计和直观的控制,以实现快速的设置和操作。该型号还提供各种配置,具体取决于具体要求。通过利用最新的MBE技术,该设备能够提供最佳的精度和精确度,以实现卓越的质量和可靠性。
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