二手 ALLWIN21 AW 903e #9201821 待售
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ID: 9201821
晶圆大小: 3"-6"
TTW Plasma etcher, 3"-6"
Wafer loading: 3-Axis robot
Stationary cassette plate
Plasma power: RF 13.56 MHz
Type: Parallel / Single wafer process
Through the wall (TTW)
Gas lines: 1-3 Lines
Throughput: 30-60 WPH, Process dependent
Temperature: 6-65ºC (±2 ºC) Capability
Gas lines: (4) Gas lines with MFCs
Etcher rate:
AW-901eR: 0-8000A / minute
AW-903eR: 0-4000A / minute
Process dependent
Uniformity: Up to ±3%, Process dependent
Particulate: <0.05 / cm2
Selectivity:
901eR: 2-20:1
AW-903eR: 2-20:1
Process dependent
MTBF / MTTA / MTTR: 450 Hours / 100 Hours / 3.5 Hours
Options:
EOP Module with PCB
GEM/SECS II Function
Lamp tower alarm with buzzer
Throttle valve pressure control
Vacuum pump
Chiller for chuck and chamber
Through the wall
Main frame, standard
Pentium class PC with
Keyboard
Mouse
USB
SW Backup
Cables
Chuck:3"-6"
Wafer aligner / Cooling station
3-Axis integrated solid robot:
H-Zero (Standard)
H1-7 x 10.5 (TTW)
Fixed cassette station:
Chuck assembly
901eR Non-anodized
903eR Anodized with flat
903eR Anodized with flat
903eR Non-anodized with flat
Reactor Assembly:
901eR Non-anodized
903eR Anodized
903eR Non-anodized
903eR High performance
Direct cooling
Non direct cooling
Pins:
Quartz
Ceramic SST
Centering ring:
Aluminum
Ceramic
Main control board:
Gas box with (4) inline gas lines, MFC, filters, and pneumatic valves
RF Matching network with PCB
RF Generator: 13.56 MHz
MKS Elite: 300 HD
MKS Elite: 600 HD
MKS Elite: 1000 HD
ENI ACG 3
ENI ACG 10
AC / DC Box
ATM Sensor
UPC Pressure control
225 SCCM: 901eR
2000 SCCM: 903eR
MKS Baratron with peumatic Iiolation valve
Main vacuum valves
Front EMO interlocks
Touch screen GU, 15"
AW-901eR AW-903eR
Material Etched Polysilicon / Nitride Oxide,SOG,Nitride
Main etchant gases SG6, O2 / SF6,O2 CHF3,SF6,He
Other gases CHCLF2 / None None
Pressure (mTorr) 200-450 / 250-350 1600-3000
RF Power (Watts) 100-250 / 200-300 400-600
Temperature (C) 30 / 30 23
AC Power:
AC Module: 200-240 VAC Selectable, 50/60 Hz, 3-wire single-phase
Temperature controller: 200-240 VAC, 50/60 Hz, 3-wire single-phase
Vacuum pump: 208-230 / 460 VAC, 60 Hz or 200-220 / 380 VAC, 50Hz, 3 Phase
RF Generator: 200-240 VAC
PC / Monitor: 115 VAC
Cabinet exhaust: 100 cfm.
ALLWIN21 AW 903 e是为半导体工业设计的高性能快速热处理器（RTP）。它是晶片和基板的温度上升/下降处理以及激光或离子植入器的理想选择。AW 903 e在高达900°C的温度下提供精确的热控制,并提供快速的斜坡速率（100°C/秒至800°C/秒）。ALLWIN21 AW 903 e采用双壁冷却设备，热质量大，可精确控制基板温度。它具有高精确率区域（HARZ）温度控制功能,可根据在HARZ中花费的时间对基板产生精确的热影响。AW 903e还配备了全自动工艺室清洗系统，旨在最大限度地减少间歇间隙清洗时的停机时间。腔室可以用H2O2、干氮或任何其他合适的清洁液清洗；清洁也可以手动进行。ALLWIN21 AW 903 e安装在不锈钢机柜中,具有易于使用的界面和计算机控制的控制台,可提供完整的过程控制。控制台允许设置参数值、自定义热配置文件和定义流程序列。此外,AW 903 e允许远程操作,为控制设备提供了一种方便、安全和可靠的方法。为了安全起见,ALLWIN21 AW 903 e具有若干先进的安全功能,如惰性气体净化、紧急关闭开关、快速降压压力阀和温度过载开关。其他功能还包括一个有多个光学窗口的腔室，以便对过程进行目视检查，以及一个自动重置开关，将腔室压力和温度重置回正常操作水平。AW 903e是半导体加工的理想快速热处理器（RTP）。它提供精确的热控制、快速的坡道速率以及全自动的腔室清洗机，使其成为晶圆和基板加工的理想选择。高级安全功能在使用处理器时提供了省心,而且控制台允许轻松定制热量配置文件和过程序列。
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