二手 AIXTRON AIX G5 HT #9074863 待售
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ID: 9074863
优质的: 2011
MOVPE Planetary Reactor
Includes Transfer Module
Application: 14x4" wafer deposition
Planetary Reactor System:
Cabinet with lining
Stainless steel reactor chamber: water-cooled, vertical lid lifting mechanism
High Growth Rate (HGR) injector: water-cooled, SiC coated graphite planetary disk, sandwich design
Max. light-pipe temperature: 1250ºC
SiC coated graphite wafer holder (satellite) with Gas Foil Rotation
(2) In-situ monitoring viewports from top
Ferro-fluidics feedthrough for main rotation with rotation monitoring
Center purge line
Thermostated reactor chamber ceiling
Graphite exhaust collector and outer liner to prevent deposition on chamber wall
Individual Satellite Rotation Drive (EqiSat)
Glove box
Main Gas Blending Unit
RF-Heating Unit
Vacuum Cleaner for glove box
Vacuum System
Large Particle Trap for nitride application
Process pump
Automated satellite transfer system for high temperature operation (600ºC)
Computer Control System
Remote PC
Safety System
Gas Handling System:
(5) MO-G1 Standard Metal-Organic Channel (2xTMGa/H2, 2xTEGa/N2, 1xTMAI/H2)
(2) MO-G1-D Double Standard Metal-Organic Channel (2xCp2Mg/H2, 2xTMIn/N2)
(1) MO-G2-T Triple Standard Gas Channel (3xNH3)
(1) MO-G3_Double Dilution Metal-Organic Channel (N.N./N2)
(1) MO-G4 Double Dilution Gas Channel with additional pusher (1xSiH4/H2)
(1) MO-G5-10M Vacuum Lines
(3) MO-G6 Dummy Line (2xMO, 1xHydride Top run/vent)
(1) N2/H2 Separation of two MO-Stacks
(2) N2/H2 Mixture unit for one Run/Vent Stack (1xMO Run/Vent)
(2) MO-Differential Vent-Run Pressure Balancing (2xMO Run/Vent)
(2) Upgrade Thermo Bath
MO-Standard Gas Channel (5% Cl2/N2 for reactor clean)
EpiCurve TT TWO:
Emissivity corrected pyrometry at 950nm
Individual wafer measurement of surface temperature
High position resolution
Real-time measurement
Temperature accuracy: +/-1K
Growth rate measurement at selectable second wavelength: 950 +405nm for GaN
19" Electronic controller, including light source and detector
User manual and CD software
Purification:
(2) Moisture Sensor (H2, N2):
DP measurement range possible down to -120ºC (1ppb)
Integration of Read-Out Value into control system
Purifier Cl2
Extensions:
Vacuum Tweezer
N2 gun for glove box
Cl2 Scrubber: Cleansorb CS200SE
2011 vintage.
AIXTRON AIX G5 HT是一种高性能、高通量的金属-有机化学气相沉积（MOCVD）反应器，用于制造先进材料和设备如半导体。反应堆采用高度精密的工艺，以确保各种材料正确暴露于等离子体和基质腔组件。重要应用领域AIXTRON AIX G5 HT能够以经济高效的方式生产各种材料。它因其在各种材料基板上的高选择性而在业界广为人知，从硅到高性能材料，如用于电子和光电子应用的砷化氙等。此外，高度可重复的生产过程和过程控制允许增加尺寸和结构控制，并使沉积薄膜在大面积上具有均匀性。G5 HT可编程工艺技术AIX G5 HT提供了一套工艺技术,这些技术是任何材料沉积成功的关键。可编程沉积源允许使用者使用各种反应性物质，而气体供给系统则允许使用载流子气体向反应室供应反应性物质。此外，高频发电机电源可以产生完全定制的脉冲波形，以增加附着力，提高薄膜的均匀性。等离子体源和基板加热AIX G5 HT中的高性能等离子体源和先进的基板加热技术可实现精确的薄膜生产,更好地控制大面积薄膜的化学、结构和机械成分。G5 HT中的等离子体源功能强大，足以实现快速可靠的蚀刻沉积工艺，这是生产先进半导体器件的关键。安全和法规遵从性AIXTRON AIX G5 HT的设计完全符合相关安全法规,以确保操作人员的安全操作和最佳安全。此外，反应堆压力过大，压力过大，能够迅速疏散有害物质和蒸气。最后，AIXTRON AIX G5 HT是为了能效而设计的，它可以在半密封模式下运作，以保证较长的製程时间。
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