二手 AIXTRON G3 #9074580 待售

GaN systems Dopants: Cp2Mg, SiH4 Transfer: load lock only Wafer loading capabilities: (24) 2” or (8) 4” CACE software EpiTune (in-situ monitoring) Facility requirements: Gas specification: N2 – 4VCRF – 4.0 ~ 7.0 bar H2 – 4VCRF – 4.0 ~ 7.0 bar NH3 – 4VCRF – 3.0 ~ 3.5 bar SiH4/H2(200ppm) – 4VCRF – 3.0 ~ 3.5 bar HCL – 4VCRF – 3.0 ~ 3.5 bar GN2(N2 tech) – 4VCRF – 7.0 ~ 8.5 bar Wafer specification: System: Inlet – 6.5 bar (maximum) 1" Swagelok bulkhead Minimum total flow 63 l/m Temp - 17°C ~ 25°C stability ± 1°C Outlet – 2.5 bar (maximum) 1” Swagelok bulkhead pump loop Minimum differential pressure 4 bar for required flow Inlet – 6 bar(Maximum) 3/4” Swagelok bulkhead Minimum total flow 50 l/m Temp - 20°C stability ± 1°C Outlet – 2 bar (maximum) 3/4” Swagelok bulkhead reactor loop Minimum differential pressure 4 bar for required flow Maximum temp – 40°C RF generator: Inlet – 6 bar (maximum) 3/4” Swagelok bulkhead Minimum total flow 36 l/m Outlet – 2 bar (maximum) 3/4” Swagelok bulkhead reactor loop Minimum differential pressure 4 bar for required flow Electrical requirements: Voltage: System: 208 V, RF generator: 380 V Current: System: 80A (customer 100A), RF generator 250A (customer 315A) Frequency: 60 Hz Wiring requirement: System: 3/N/PE, RF generator: 3/PE Main power location: E-rack UPS input location: internal to E-rack, provided as spare Exhaust specifications: Total cabinet exhaust requirement: GMS (750m3/h) (2ea) Reactor (500m3/h) (2ea) TGA exhaust requirement: - Process gas exhaust connected to scrubber DN40KF flange, 50~100mm below top of glovebox open line for continuous flow HE-leak tight ≤ 10E-9 mbar l/s Oxygen < 1ppm Line pressure atm > p > atm – 20mbar - Exhaust GB pump, 3/8” Swagelok - Exhaust Forming gas, 3/8” Swagelok.