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ID: 9198724
晶圆大小: 8"
CVD System, 8"
Loadlock Indexer
Process chamber lift
HP Robot
System information:
(3) Chambers:
Chamber A: DXZ SiN
Chamber B: DXZ SiN
Chamber C: DXZ SiN
Chamber E: MS Cool
LLA: Narrow
LLB: Narrow
Mainframe:
System placement: Through the wall
Robot type: HP Robot
Robot blade: Nickel coated AL
OTF
W/F Position sensor
Loadlock:
Loadlock cassette: Narrow
Wafer mapping: Basic
N2 Purge type: Tylan 2900
Chamber A, B and C:
Clean method: RF
Frequency: Single HF
Throttle valve type: Dual spring
Manometer: Dual 10/100 torr
Electrical:
Line frequency: 50/60 Hz
Line voltage: 200/208 V
Line amperage: 240A
System monitors:
1st Monitor: Through the wall
2nd Monitor: Stand alone
Generator (AC) rack:
(3) Generators: AE RFG 2000-2V
Umbilicals:
Monitor: 55ft
Signal cable length (S/C ~ MF): 50ft
HX Cable length: 55ft
Gas delivery options:
MFC Type: STEC 4400 MC
Valves: Veriflo 10 Ra Max
Filters: Millipore
Transducers: MKS with out display
Regulators: Veriflo
System cabinet exhaust: Top
Gas pallet configuration:
Chamber A, B & C: SEC4400
System controller:
Slot Top rack BD
2 System reset
3 Lk Det 1&2 orConv/TC
5 Lk Det 5&6 orConv/TC
6 Lk Det 7&8 orConv/TC
9 EWOB Centerfinder
12 Floppy disk drive
13 Hard disk drive
14 Chamber A interface
15 Chamber B interface
16 Chamber C interface
18 Chamber E interface
19 Mainframe interface
20 Loadlock interface
21 Chamber A Dl/O 1
22 Chamber A Dl/O 2
23 Chamber B Dl/O 1
24 Chamber B Dl/O 2
25 Chamber C Dl/O 1
26 Chamber C Dl/O 2
29 Chamber E DI/O
30 Synergy SBC(V440)
32 Video
33 I/O Expansion
34 SEI
35 Chamber A Al/O
36 Chamber B Al/O
37 Chamber C Al/O
39 Mainframe Al/O 1
40 Chamber E/MF Al/O 2
41 Mainframe Dl/O 1
42 Mainframe Dl/O 2
43 Mainframe Dl/O 3
44 Mainframe Dl/O 4
45 Mainframe Dl/O 5
46 Mainframe Dl/O 6
47 Stepper 1
48 Stepper 2
49 Stepper 3
50 OMS (VMEX)
RF Generator:
Chamber Maker Model
A, B & C AE RFG 2000-2V 3155053-003B
RF Match box (Match multifunction adapter with interlock 7-J14 OHM):
Chamber Maker Model
A AE 3155077-003B
B & C AE 3155077-003A
Heat exchanger:
APPLIED MATERIALS AMAT0 Heat exchanger, 0010-70008.
AMAT/APPLIED MATERIALS Centura 5200 DxZ是一种半导体反应堆，配备了微电子制造的新的精度和性能水平。它利用AMAT先进的制造技术来生产小巧、精确和一致的特性。反应堆采用先进的离子源设计，具有快速添加和去除蚀刻室离子的能力，以提高工艺性能。高端离子源为精密蚀刻提供了卓越的控制和精度。AMAT Centura 5200 DxZ也配备了下一代的腔室设计。该腔室有四面墙壁，全部设计成手工工作，以产生高质量、精确的蚀刻和最小化的材料损失。墙壁作为高度精确的墙壁来划定蚀刻配方，除了在操作过程中提供优越的温度和压力控制。墙壁也促进了更安静的操作，同时仍然保证了完美的精确度。APPLIED MATERIALS Centura 5200 DxZ使用专有基板支架将基板牢固地固定到位,以确保精确蚀刻。反应堆还包括一个计算机控制的自动气体溷合系统，确保将适量的气体输送到蚀刻室进行精确蚀刻。使用的气体是氮气、氙气和氧气。接口RF发生器提供正确蚀刻过程所需的电源。Centura 5200 DxZ专为半导体和MEMS制造环境而设计。它能够处理大小尺寸小至25纳米的大小晶片。这座反应堆的发电站非常适合设计、稀释、蚀刻和钝化特性，精度无与伦比。此外,它还设计用于多种蚀刻环境和蚀刻配方,包括干蚀刻、湿蚀刻、等离子体蚀刻、反应性离子蚀刻、深反应性离子蚀刻和电离物理蚀刻。这使得AMAT/APPLICED MATERIALS Centura 5200 DxZ成为生产功能强大、精确且一致的产品的理想选择。
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