二手 AMAT / APPLIED MATERIALS Centura 5200 Epi #9034366 待售
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ID: 9034366
System, 8"
(3) Selective Epi chambers RP
Process: SEG (Selective Epitaxial Growth)
Software version: B6.40
Wafer shape: SNNF (Semi Notch No Flat)
Wafer cassette: 8" PEEK Miraial
Wafer transfer: Robot: HP+ENP, Wafer centering: On the fly
SMIF Interface: No
System configuration:
Chamber A; SEG
Chamber B: SEG
Chamber C: N/A
Chamber D: N/A
Chamber F: Single cool down
Chamber A, B, and C:
Manometer: MKS (1 Torr, 100 Torr, 1000 Torr)
Clean type: HCI Clean
RGA Port: Yes (connection port to the foreline)
(2) Pyrometers (upper/lower): Iron: MR-T399-99C, K118 (AMAT: 0090-35052)
Gas Pallet Configuration:
Gas name: MFC size
H2/N2 (H2 Main): H2: 100 L
H2/N2 (H2 Slit): H2: 20 L
HCl: HCl: 300 cc
SiH4: SiH4: 1 L
GeH4: H2: 500 cc
Direct-Dopant 1: H2: 300 cc
Mixed-Dopant: H2: 300 cc
SiH2Cl2: SiH2Cl2: 1 L
Direct-dopant 2: H2: 300 cc
Gas Delivery:
MFC: Type: Unit (C8100AF, C3101AF)
Valves: Veriflo
Rim pressure compressor: Pump CPRSR air with RSVR 1 MPA
Filters: Pall Teflon filter
Transducers: Measurement: MKS 852861PCH2GD, Display: MKS LDM-14793
Regulators: Veriflo Parker
Coating: SUS316EP
Single line drop (SLD): No
System cabinet exhaust: Top and side
(3) H2 Leak detector: Control Inst: SNT476-1000 ppm-H2 (AMAT: 0820-01021
(1)System controller: Remote AC Controller
Transformer: N/A (480 V Direct connection)
Chamber process kit: Quartz, carbon parts
QTY | AMAT P/N | Parts Name
(1) 0200-36727 SUSCEPTOR, 200MM EPI W/O CENTER TOSHIB
(1) 0200-35081 RING, PREHEAT GRAPHITE BETA COATING
(4) 0200-36642 PIN, 200MM EPI WAFER LIFT (LIFT+LINER LOCK PIN)
(3) 0200-00207 TIP, SUSCEPTOR SHAFT OUTSIDE
(1) 0200-35007 DOME, UPPER RP
(1) 0200-35042 DOME, LOWER QTZ W/BALL
(1) 0200-35162 LINER, CHMBR UPPER BRKT/CEN (25x)
(1) 0200-35161 LINER, CHMBR LOWER BRKT/CEN (25x)
(2) 0200-35916 INSERT, INJECT 3 ZONE QTZ (25x)
(2) 0021-00571 INSERT,EXHAUST SST
(1) 0200-35159 BAFFLE, INJECT 3 ZONE (25x)
(1) 0200-00412 SHAFT, SUSCEPTOR W/RMVBL PINS NO CEN EPI
(1) 0200-35424 LIFT, WAFER 8" POLY QUARTZ
Foreline heater: Heater jacket from tool to pump 4", temp controller (not included in scope)
Dry pumps: Stored inside of Helios Zenith (not included in scope)
Load lock: iL70N New Look
Transfer: iL70N New Look
Chamber A: iH-35SE
Chamber B: iH1000
Chamber C: iH1000
Gas abatement: (not included in scope)
(1) Boc Edwards Helios Zenith
(1) Kurita water circulation unit
Full load current: 280 A
Maximum system rating: 87 KVA
Ampere rating of largest load: 100 A
Interrupting current: 10,000 Amps I.C.
480 VAC, 3-Ph, 50/60 Hz, 4-Wires
2003 vintage.
AMAT/APPLIED MATERIALS Centura 5200 Epi是一种现代半导体加工工具,用于将多晶材料薄层沉积到基板上。该反应堆适用于多种外延处理应用,如外延、应变层异质结构、高移动性缓冲层、位错缓减和低缺陷器件层。AMAT Centura 5200 Epi利用大气室和压力控制设备诱导高温原位外延生长。该反应堆为安全控制反应环境和工艺条件提供了高精度系统。其特点是采用低压石英双室设计,对基板进行逐区温度控制。这确保了可重现和均匀的外延生长。APPLIED MATERIALS Centura 5200 Epi附有一个燃料输送装置,设计用于精确稳定地控制引入腔室的反应物气体。它配备了集成的遥感质量流控制器,可不断调整压力,在一定压力范围内保持精确的气流和组成。本机防止污染物和杂质进入反应堆室。Centura 5200 Epi还包括一个互锁的旁通阀和压力监测工具。这消除了对资产进行频繁维护的需要。此外,其先进的吹扫面板有两级加热模型。这提供了高效的板载塑化剂去除和颗粒控制设备。这样可以提高工艺气体稳定性和提高工艺均匀性。AMAT/APPLIED MATERIALS Centura 5200 Epi也被设计成具有强大的快速响应加热和冷却系统。此机制可确保从低至500 °C和高至700 °C的温度中精确控制温度。高温控制器提供精确的温度均匀性,以实现准确和可重复的工艺性能。AMAT Centura 5200 Epi是一款先进、精密的epi处理工具,旨在满足各种现代半导体制造需求。它在各种各样的epi处理应用中提供了均匀性和可靠性,使其成为现代半导体制造商的理想工具。
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