二手 AMAT / APPLIED MATERIALS Centura 5200 Phase I #9133092 待售

ID: 9133092
Oxide etcher, 8" Wafer shape: JMF Chamber Type/ Location Selected Option System Configuration BASE Position A Oxide Main Etch Position B Oxide Main Etch Position C Oxide Main Etch Position F ORIENTER Position A Configuration Oxide Main Etch Position B Configuration Oxide Main Etch Position C Configuration Oxide Main Etch Position D Configuration System Safety Equipment Selected Option EMO Switch Type TURN TO RELEASE EMO ETI COMPLIANT EMO Guard Ring INCLUDED Smoke Detector At MF No Skin YES Smoke Detector At Gen Rack YES Smoke Detector At AC Rack YES Water and Smoke Detector ALARM System Labels ENGLISH CHA - CHA - OXIDE Chamber Options Selected Option Process Kit USED Turbo Pump Seikoseiki 301 Emission Endpoint Type Monocro Oxide ESC USED Flat BIAS RF GEN OEM-28B MxP Oxide Throttle Butter fly MxP Oxide Gate Valve VAT CHB - CHB - OXIDE Chamber Options Selected Option Process Kit USED Turbo Pump Seikoseiki 301 Emission Endpoint Type Monocro Oxide ESC USED Flat BIAS RF GEN OEM-28B MxP Oxide Throttle Butter fly MxP Oxide Gate Valve VAT CHC - CHC - OXIDE Chamber Options Selected Option Process Kit USED Turbo Pump Seikoseiki 301 Emission Endpoint Type Monocro Oxide ESC USED Flat BIAS RF GEN OEM-28B MxP Oxide Throttle Butter fly MxP Oxide Gate Valve VAT Gas Delivery Options Pallet Options Selected Option Valve Fujikin Regulator Fujikin Gas Panel Pallet A Gas Panel Pallet A Gas Line Requirement Selected Option Pallet Pallet Gas Line Configuration Selected Option Pallet Corrosive Gas Line Qty 3 Pallet Inert Gas Line Qty 5 Filter Qty 8 Gas Panel Pallet B Gas Panel Pallet B Gas Line Requirement Selected Option Pallet Pallet Gas Line Configuration Selected Option Pallet Corrosive Gas Line Qty 3 Pallet Inert Gas Line Qty 5 Filter Qty 8 Gas Panel Pallet C Gas Panel Pallet C Gas Line Requirement Selected Option Pallet Pallet Gas Line Configuration Selected Option Pallet Corrosive Gas Line Qty 3 Pallet Inert Gas Line Qty 5 Filter Qty 8 Gas Panel Features Gas Panel Features Gas Panel Features Selected Option Gas Panel Controller VME I Mainframe General Mainframe Options Selected Option Facilities Type REGULATED Facilities Orientation MAINFRAME FACILITIES BACK CONNECTION Loadlock/Cassette Options Selected Option Loadlock Type NBLL W/ AUTO-ROTATION Loadlock Cover Finish ANTI-STATIC PAINTED Loadlock Slit Valve Oring Type VITON Wafer Mapping STD Wafer Out of Cassette Sensor YES Cassette Present Sensor YES Transfer Chamber Options Selected Option Transfer Ch Manual Lid Hoist YES Robot Type CENTURA HP ROBOT Wafer On Blade Detector BASIC Loadlock Vent BOTTOM VENT Front Panel Selected Option Front Panel ANTI-STATIC PAINTED Signal Light Tower 4 COLOR SIGNAL LIGHT TOWER INCLUDING RED LIGHT 4 Color Signal Light Tower Configuration Selected Option Top Light Color RED Second Light Color YELLOW Third Light Color GREEN Fourth Light Color BLUE Signal Light Tower Buzzer ENABLED Second Signal Light Tower YES Remote System Controller Selected Option Controller Type 86 INCH COMMON CONTROLLER Cntrlr Electrical Interface BOTTOM FEED Controller Exhaust TOP EXHAUST Controller Cover Option YES System Monitors Selected Option System Monitor 2 TTW / different cable lengths Monitor Cursor 2 BLINKING CURSOR AC Rack Selected Option GFI 30mAMP AC Rack Types 84 INCH SLIM AC GEN RACK Exhaust Collar 84 INCH SLIM RACK EXHAUST COLLAR Umbilical Selected Option Ctrlr to Mainframe Umbilical 25Ft HX Control Cable Length 50Ft Heat Exchanger Hose Length 65Ft Pump Cable Length 65Ft RF Generator Cable 65Ft Pump Interface Only Selected Option Pump Interface Qty Interface Only.
AMAT/APPLIED MATERIALS Centura 5200 I期是为半导体制造而设计的反应堆。它具有具有SiH4/NH3/DOP射频源的56MHz端点蚀刻,并且能够利用基于三氯化磷(PCl3)的蚀刻模块将蚀刻深度降至8.5微米。该腔室由不锈钢制成,具有低温操作,以更好的蚀刻/工艺兼容性。反应堆配有一个过程控制箱和一个单独的气闸,用于装卸腔室。AMAT Centura 5200 I期具有一个内部加热、气密的大型工艺室。该腔室设计用于防止微粒和蚀刻试剂在蚀刻过程中进入晶片。可容纳高达2英寸(5.08厘米)和8000磅(3.63吨)的半导体晶圆。该室设有真空设备和带偏转挡板的排气烟囱,以确保均匀蚀刻和低背面污染。内置端点控制器通过测量腔室内部的压力、气体输送系统的状态以及通过电源磁控管的电流来监控蚀刻过程。该工艺室还包含一个自动温度补偿模块(ATCM),以提高工艺一致性和性能。ATCM的范围从180°到260 °C,并提供了广泛的工艺优化调整。它还具有灵活的温度控制和用户可选择的参数来优化工艺参数。端点蚀刻工艺旨在对蚀刻深度进行高效、精确的控制。APPLIED MATERIALS Centura 5200 Phase I具有自调56 MHz射频电源和全波形过程控制单元。这台机器允许操作员蚀刻具有不同蚀刻深度的晶片,也有助于防止晶片的损坏和疤痕。最后,Centura 5200第一阶段旨在提供安全、可靠和可重复的过程,并具有出色的最终效果。它具有内置的安全功能,可以在发生潜在故障时提醒操作员。该工具还具有内置的维护和故障排除功能,便于分析和故障排除。因此,AMAT/APPLIED MATERIALS Centura 5200 I期是高效生产半导体晶片的理想资产。
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