二手 AMAT / APPLIED MATERIALS Centura DPS II #9189888 待售

ID: 9189888
晶圆大小: 12"
优质的: 2006
Metal etcher, 12" Chamber configuration: (3) DPS II Axiom Chamber configuration: Chamber A: Chamber model: DPS II Bias generator: AE APEX 1513, 13.56 MHz, maximum 1500 W Bias match: AE 13.56 MHz,3 kV navigat Source generator: AE APEX 3013, 13.56 MHz, maximum 3000 W Source match: AE 13.56 MHz,6 kV navigat Lid: Ceramic lid, Single gas nozzle Turbo pump: STP-A2503PV Throttle valve: VAT Pendulum valve DN-250 ESC: Dual zone ceramic ESC Endpoint type: Monochromator Cathode chiller: SMC POU Wall chiller: SMC INR-496-016C Process kits coating: Anodize coating Cooling: HT 200 / FC 40 Chamber B: Cathode chiller: SMC POU Chamber C: Cathode chiller: SMC POU Wall chiller: SMC INR-496-016C Mainframe configuration: IPUP Type: ALCATEL A100L Gas panel type: NextGen VHP Robot: Dual blade MF PC Type: CPCI Factory interface configuration: Frontend PC type: 306 Server FIC PC type: 306 Server (3) Load ports Atmospheric robot: Yaskawa track robot Side storage: Right side MFC Configuration: Chamber A: Gas line Gas name Max flow MFC Type Gas 1 BCL3 200 ARGD40W1 Gas 2 C2H4/HE 400 AAPGD40W1 Gas 3 NF3 200 AAPGD40W1 Gas 4 CL2 400 SC-24 Gas 5 N2_50 50 AAMGD40W1 Gas 6 N2_300 300 AAPGD40W1 Gas 7 CF4 100 AAPGD40W1 Gas 8 O2 1000 AASGD40W1 Gas 9 SF6 100 AAPGD40W1 Gas 10 CHF3 50 AANGD40W1 Gas 12 AR 400 AAPGD40W1 Chamber B: Gas line Gas name Max flow MFC Type Gas 1 BCL3 200 AARGD40W1 Gas 2 C2H4/HE 400 AAPGD40W1 Gas 3 NF3 200 AAPGD40W1 Gas 4 CL2 400 AARGD40W1 Gas 5 N2_50 50 AAMGD40W1 Gas 6 N2_300 300 AAPGD40W1 Gas 7 CF4 100 AAPGD40W1 Gas 8 O2 1000 AASGD40W1 Gas 9 SF6 100 AAPGD40W1 Gas 10 CHF3 50 AANGD40W1 Gas 12 AR 400 AAPGD40W1 Chamber C: Gas line Gas name Max flow MFC Type Gas 1 BCL3 200 AARGD40W1 Gas 2 C2H4/HE 400 AAPGD40W1 Gas 3 NF3 200 AAPGD40W1 Gas 4 CL2 400 AARGD40W1 Gas 5 N2_50 50 AAMGD40W1 Gas 6 N2_300 300 AAPGD40W1 Gas 7 CF4 100 AAPGD40W1 Gas 8 O2 1000 AASGD40W1 Gas 9 SF6 100 AAPGD40W1 Gas 10 CHF3 50 AANGD40W1 Gas 12 AR 400 AAPGD40W1 2006 vintage.
AMAT/APPLIED MATERIALS Centura DPS II是专为半导体器件制造而设计的高能、高通量等离子体蚀刻反应器。AMAT Centura DPS II的蚀刻速率是市场上可获得的最高之一。此功能使制造商能够缩短周期时间并提高生产吞吐量。反应堆还可以降低蚀刻过程中底物的温度,从而有助于保持半导体器件的结构完整性。APPLICED MATERIALS CENTURA DPS+II采用AMAT高密度等离子体(HDP)技术,在整个基板表面提供卓越的均匀性和出色的蚀刻选择性。这种对等离子体生成物种的优越控制也降低了底物上的缺陷密度。反应堆的HDP源具有低功率、脉冲电子源和多个感应耦合等离子体源以及集成气体控制系统,在底物蚀刻过程中提供了很大的灵活性。Centura DPS II的最大基板尺寸为200 mmx200mm。它还提供可变压力控制、真空排气和可调工艺温度,允许微调等离子体处理条件。此外,还可以对反应堆进行调整,以优化浅沟槽、窄细胞和其他需要低电离或激光蚀刻损伤的具有挑战性的特征。闭环墨盒式平台设计有助于保持工艺气体的清洁,进一步帮助减少缺陷的形成。其大型PDLT电池和低离子室设计也使加工时间最小化,生产吞吐量最大化。最后,APPLIED MATERIALS一套过程监控和优化软件有助于实现可靠和可重复的过程结果,满足最严格的行业标准。
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