二手 AMAT / APPLIED MATERIALS Centura Ultima HDP CVD #115605 待售
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ID: 115605
晶圆大小: 8"
优质的: 2000
Etcher, 8"
(2) Ultima chambers
Technology :IMD
Wafer Size : 200mm
Wafer Shape : SNNF (Semi Notch No Flat)
Software Version : B4.3.14
Ch A : Ultima HDP-CVD
Ch B : Ultima HDP-CVD
Ch D : Ultima + HDP-CVD
Ch E : Multislot Cool Down
Ch F : Orienter
CHAMBER A,B Ultima HDP-CVD :
Nozzle : Long/Long Side
Clean Gas Distribution : Baffle
Turbo Pump : Ebara ET1600WS w/ HVA
Wafer Temperature Monitoring : Yes
Top Gas Feed : Without Top O2
Dual Independent He Control : Standard 10/10 TORR
Clean Method : Microwave
CHAMBER D - Ultima + HDP-CVD :
Nozzle : Long/Long Side
Clean Gas Distribution : Baffle
Turbo Pump : Ebara ET1600WS w/ HVA
Wafer Temperature Monitoring : Yes
Top Gas Feed : Without Top O2
Dual Independent He Control : Standard 10/10 TORR
Clean Method : Top Mount
Line Frequency : 60Hz
Line Voltage : 200/208V
Line Amperage : 600A Platform
EMO type : Turn to release EMO
EMO Guard Ring : Yes
System Labels : English w/Chinese Non-simplified
System Smoke Detector : Controller
EXISTING MAINFRAME :
Mainframe Type : Ultima HDP w/Multislot
Frame Type : Standard Frame
System Placement : Through the Wall
Mainframe Skins : No
Mainframe Exhaust Duct : No
Mainframe Facilities Connection : Back
Robot Type : HP Robot
Robot Blade : Ceramic
Narrow body Loadlocks : Cassette Present Sensor
Loadlock Wafer Mapping : Basic
N2 Purge Type : STEC 4400MC 10 Ra Max
Gas Panel Surface Finish : Standard Gas Panel
MFC Type : STEC 4400MC 10 Ra Max
Valves : Fujikin 5 Ra Max
Filters : Pall Ni 10 Ra Max
Transducers : MKS w/ Display
Regulators : Veriflo
System Cabinet Exhaust : Top
Gas Panel Gas/Flow Direction Labels : Yes
APC Seriplex Cover : Yes
Gas Panel Doors : Solid
Gas Pallet Configuration :
Chamber A, B, D
Gas Stick/Process Gas/MFC size/Regulator/Transducer
#1 SiF4 100 Y Y
#2 O2 400 Y Y
#3 SiH4 200 Y Y
#4 Ar 300 Y Y
#5 SiH4 20 Y Y
#6 Ar 50 Y Y
#7 NF3 2000 Y Y
#8 Ar 2000 Y Y
RF Generator Rack - Ultima Gen. Rack
Chamber A, B :ASTEX 80S09mW (2)
Chamber D : ENI Genesis Nova -50A-04
Ultima Stand-Alone RF Generator Rack : Yes
Generator Rack Cooling - RF Gen Rack Manifold with Quick Disconnect
Ultima Gen Rack H20 Connection - Barbed Brass
Heat Exchanger : SMC Thermo
System Controller Signal Cable Length : 55ft
RF Gen Rack Cable Length : 50ft
Ultima Stand-Alone Generator Rack : 98 ft
HX Hose Length : 50ft
HX Cable Length : 50ft
Pump Cable : 50ft
Ultima Microwave Generator Cable Length : 50 ft
Ultima WTM Cable Length : 32.8 ft (10m)
Vacuum Pumps, Exhaust Scrubber not included in sale
System Can be inspected
Currently Crated
2000 vintage.
AMAT Centura Ultima高密度等离子体（HDP）化学气相沉积（CVD）反应器是一种多合一工艺设备,可在大小晶片上提供精确、准确和经济高效的薄膜和薄膜堆栈沉积。这种CVD反应器利用高沉积速率的高效等离子体源，以便在一系列复杂的底物上沉积超薄膜。这款高性能工具提供了成熟的流程窗口、令人难以置信的可重复性以及晶圆厂环境中无与伦比的性能和鲁棒性。AMAT/APPLIED MATERIALS Centura Ultima HDP CVD利用高功率和高频率的先进等离子体源来确保对沉积速率和均匀性的精确控制。该系统旨在处理高密度等离子体操作，使用户在一系列薄膜材料上实现高均匀性和高沉积吞吐量。该装置在大（200毫米）和小（150毫米）直径的基板上提供精确、可重复的沉积，使其成为工业领先的复合基板上薄膜沉积反应器。AMAT Centura Ultima HDP CVD机器设计具有一系列安全和人体工程学特性,确保用户安全和易于操作。机器人臂设计为提供安全可靠的晶圆传输，最大限度地减少了整个过程周期。该工具的单室设计确保了由于消除了腔室之间的转移操作而提高了安全性。资产优化的人体工程学为人员提供了一个安全的环境，减少了操作员失误和其他事故的可能性。APPLICED MATERIALS Centura Ultima HDP CVD是一种高性能的模型，能够精确精确地沉积薄膜。这种设备使用先进的等离子体源，并在一系列基材尺寸和形状上提供高均匀性。该系统符合人体工程学，安全，与一系列先进的薄膜材料完全兼容。这种CVD反应器是大型半导体制造设施和研发环境中薄膜沉积的理想工具。
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