二手 AMAT / APPLIED MATERIALS Centura Ultima HDP CVD #9063643 待售
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ID: 9063643
晶圆大小: 8"
优质的: 2000
Etcher, 8"
(2) Ultima chamber
(1) Ultima plus chamber
Technology :IMD
Wafer Size : 8"
Wafer Shape : SNNF (Semi Notch No Flat)
Software Version : B4.3.14
CHAMBER TYPE AND LOCATION
Ch A : Ultima HDP-CVD
Ch B : Ultima HDP-CVD
Ch C : Ultima + HDP-CVD
Ch E : Multislot Cool Down
Ch F : Orientor
CHAMBER A,B Ultima HDP-CVD :
Nozzle : Long/Long Side
Clean Gas Distribution : Baffle
Turbo Pump : Ebara ET1600WS w/ HVA
Wafer Temperature Monitoring : Yes
Top Gas Feed : Without Top O2
Dual Independent He Control : Standard 10/10 TORR
Clean Method : Microwave
CHAMBER C - Ultima + HDP-CVD :
Nozzle : Long/Long Side
Clean Gas Distribution : Baffle
Turbo Pump : Ebara ET1600WS w/ HVA
Wafer Temperature Monitoring : Yes
Top Gas Feed : Without Top O2
Dual Independent He Control : Standard 10/10 TORR
Clean Method : Top Mount
EXISTING ELECTRICAL REQUIREMENTS
Line Frequency : 60Hz
Line Voltage : 200/208V
Line Amperage : 600A Platform
EXISTING SAFETY EQUIPMENT :
EMO type : Turn to release EMO
EMO Guard Ring : Yes
System Labels : English w/Chinese Non-simplified
System Smoke Detector : Controller
EXISTING MAINFRAME :
Mainframe Type : Ultima HDP w/Multislot
Frame Type : Standard Frame
System Placement : Through the Wall
Mainframe Skins : No
Mainframe Exhaust Duct : No
Mainframe Facilities Connection : Back
Robot Type : HP Robot
Robot Blade : Ceramic
Loadlock Cassette : Narrow Body
Narrow body Loadlocks : Cassette Present Sensor
Loadlock Wafer Mapping : Basic
N2 Purge Type : STEC 4400MC 10 Ra Max
EXISTING GAS DELIVERY :
Gas Panel Surface Finish : Standard Gas Panel
MFC Type : STEC 4400MC 10 Ra Max
Valves : Fujikin 5 Ra Max
Filters : Pall Ni 10 Ra Max
Transducers : MKS w/ Display
Regulators : Veriflo
System Cabinet Exhaust : Top
Gas Panel Gas/Flow Direction Labels : Yes
APC Seriplex Cover : Yes
Gas Panel Doors : Solid
Gas Pallet Configuration :
Chamber A, B, C
Gas Stick/Process Gas/MFC size/Regulator/Transducer
#1 SiF4 100 Y Y
#2 O2 400 Y Y
#3 SiH4 200 Y Y
#4 Ar 300 Y Y
#5 SiH4 20 Y Y
#6 Ar 50 Y Y
#7 NF3 2000 Y Y
#8 Ar 2000 Y Y
REMOTES :
RF Generator Rack - Ultima Gen. Rack
ASTEX 80S09mW (3)
Quantity : Two
Ultima Stand-Alone RF Generator Rack : Yes
Generator Rack Cooling - RF Gen Rack Manifold with Quick Disconnect Ultima Gen Rack H20 Connection - Barbed Brass
Existing Heat Exchanger : SMC Thermo
Umbilicals :
System Controller Signal Cable Length : 55ft
RF Gen Rack Cable Length : 50ft
Ultima Stand-Alone Generator Rack : 98 ft
HX Hose Length : 50ft
HX Cable Length : 50ft
Pump Cable : 50ft
Ultima Microwave Generator Cable Length : 50 ft
Ultima WTM Cable Length : 32.8 ft (10m)
Vacuum Pumps, Exhaust Scrubber not included in sale
Currently crated and stored
System Can be inspected
1999-2000 vintage.
AMAT/APPLIED MATERIALS Centura Ultima HDP CVD（高密度等离子体化学气相沉积）反应器是一种模块化、低成本、垂直的熔炉，专为尖端薄膜材料的高容量、高通量生产而设计。该反应堆采用了一种创新的专利设计，使用了大量的高密度等离子体，从而实现了更快的沉积速率和更高的产率。该技术还提供低寄生虫和改进的沉积均匀性，使其成为太阳能电池、平板显示器、光学涂层和先进半导体器件等应用的绝佳选择。AMAT Centura Ultima HDP CVD反应堆使用RF驱动的高密度等离子体（HDP）在低温下驱动反应，使其节能，非常适合生产高性能薄膜涂层。该技术还消除了传统上与CVD工艺相关的许多昂贵的物料处理和清洁步骤,最大限度地降低了成本并提高了总体产量。该设备具有高度的可配置性，允许各种等离子体源和材料----包括金属和介电靶标、介电化合物和气体靶标----以可选择的顺序使用。SPLIED MATERIALS CENTURA Ultima HDP CVD反应堆的核心是子模块或工作空间，它是一个完全封闭的腔室，具有单一等离子体源和集成气体护理系统。该气体护理装置确保沉积过程中使用的气体的连续流动始终处于最佳水平，以获得准确的结果。一个中央安装的目标支架确保被涂覆的基板由等离子体旋转而不会受到任何阻塞，从而在沉积过程中达到最佳均匀性。高密度等离子体加上均匀的沉积，确保底物的温度保持低且均匀，保持材料的特性，同时确保在整个表面有高质量、精确图样的沉积。机器的高级控制软件提供了一个直观的用户界面，允许对过程参数进行精确控制，并允许有针对性地优化沉积过程。Centura Ultima HDP CVD反应堆是任何涉及尖端薄膜沉积的生产线的绝佳选择。由于其创新和经济高效的设计,高吞吐量的生产以低成本和最低开销实现。这使得该工具成为寻求充分发挥薄膜沉积潜力和提高器件性能的工业制造商的一个有吸引力的选择。
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