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ID: 9392312
Physical Vapor Deposition (PVD) System, 12"
Process: Reflowsput
Chamber Position
C- Process type reactive PC
Process type SIP Ti: 1 And 5
Process type ALPS: 2
HT Al: 3 And 4
D - RT DSTTN
Process Type: Reactive PC
Chamber position: C
Chamber body:
Al
Part number: 0040-76718
Slit valve
Seal: Bonded
Door part number: 0040-84391
Bias Generator Frequency: 13.56 MHz and 2 MHz(In one generator)
RF:
Coil generator: COMDEL CDX-2000
Match box: 0010-21748 / 0010-52033
AMAT / APPLIED MATERIALS Part number : 0190-23308
Adaptor part/number: 0041-02659
Upper shield part/number: BELLJAR 0040-55456
Treatment (Arc spray / bead blast): AL2O3
Lower shield part/number: 0040-86514
Treatment (Arc spray / bead blast): Bead Blast
inner / mid shield part/number: 0021-19342
Shield clamp part/number: 0020-19258
Inner / mid shield clamp part/number: Insulator 0200-01903
Cryo gate valve (2/3 Pos): PENDULUM
MFC 1
Gas: He
Cal Factor: 1
Size: 300
Type: He
Part number: 0010-44160
MFC 2
Gas: Ar2
Cal Factor: 1
Size: 200
Type: Ar
Part number: 3030-13113
MFC 3
Gas: A
Cal Factor: 1
Size: 20
Type: Ar
Part number: 3030-13116
MFC 4
Gas: (MFC6) H2
Cal Factor: (MFC6) 1
Size: (MFC6) 100
Type: (MFC6) H2
Part number: (MFC6) 0015-02990
Chamber base pressure (T): 0.0000002
Chamber Rate of rise (nTorr / min): 15000
Process Ar supply pressure: 34.7
Process N2 supply pressure: 33.9
Vent Ar pressure: 47.7
Optional Gas (He): 30.1
CDA: 95.7
Slit valve CDA: 85
Cooling water flow (GPM): 0.8
Process type: SIP Ti
Chamber position: 1,5
Shutter option
chamber body:
(Al or SST): SS
Part number: 0040-98657
Slit valve:
Seal: Bonded
Valve door part number: 0040-84391
Target:
Vendor: Nikko/Tosoh
Bakeout / idle power (%): 0.4
DC Power supply (AE-MDX): AE-Pinnacle
AMAT Part number Master: 0190-08122
AMAT Part number Slave: 0190-08122
Generator size : 20kw
DC (12 kwh, 24kwh): 40 kw
Bias generator : ENI - GHW12Z
AMAT Part number : 0190-25529
Bias Generator:
Size: 1.25KW
Frequency: 13.56 MHz
Rf Match Box: 0010-02372/0010-52034
Magnet:
Rotation speed (RPM): 65
Shim thickness: Ch1:1.25mm Ch5:1.0mm
Type: LP-3.7.4
Part number: 0010-11228
Target to magnet spacing (mm): 1.5 ± 0.6
Adaptor part number: 0040-82921
Kit spacer:
Upper part number: 0040-7694
Lower part number: 0040-62877
Upper shield part number: 0020-23549
Treatment:
(Arc spray/Bead Blast): Arc Spray
(Arc spray/Bead Blast): Bead Blast
Lower shield:
Part number: 0020-02344
Clamp part number: 0020-02348
Inner / mid shield:
Part number: 0020-54777
Clamp part number: 0020-08299
Dep ring part number: 0200-08301
Cover ring part number: 0021-17770
Insulator bushing part number: 0200-00590
Shutter: 0021-25014
Pedestal:
Type: SLT FDR E-CHUCK
Part number: 0010-22985
Heater spacing in steps: -55050
Maximum Cryo regen gas load (L): 400
Cryo gate valve (2/3 Pos): 3-Position
MFC 1:
Gas: N2
Size: 200
Type: N2
MFC 3:
Gas: Ar
Size: 50
Type: Ar
MFC 4:
Gas: ArH
Size: 20
Chamber base pressure (T): 2.0 e-8
Chamber Rate-of-Rise (nTorr / min): 522
Process supply pressure:
Ar 30psi
N2 30psi
Cryo regen N2 pressure: 90
Vent Ar pressure: 40
CDA: 88
Slit valve CDA: 82
Cooling water flow (GPM): 8.9
Vent Ar pressure: 47.7
Lower shield part number: 0021-22065
Upper shield part number: 0021-21234
Process type: (RT DSTTN)
Chamber position: D
Heater spacing:
55mm
Steps: -51000
Optional gas (He): 37.9
CDA: 95.7
Cooling water flow (GPM): 11.2.
AMAT/APPLIED MATERIALS Endura II铝互连（AMAT）集成了专门为生产铝基互连而设计的独特设计。该反应堆用于先进半导体和光电器件的开发。它是有机场效应晶体管（OFET）和有机发光二极管（OLED）等技术的理想设备。AMAT Endura II铝互连具有各向异性蚀刻工艺,可确保精确的互连。这是由于电感耦合等离子体源和低压等离子体源的结合操作而实现的，这两个源允许蚀刻具有垂直边缘、低接触电阻和金属无过多损失的高长宽比金属痕迹。ICP源与一个电阻、低压、过滤过的Ar-Cl2（氙-氯）工艺室结合，具有集成的、计算机控制的动态温度控制系统。这种组合提供了精密的链路处理，能够产生高长宽比的特性，而不会有任何过度的金属损失。它还配备了动态压力控制（DPC）单元,可确保工艺条件得到优化,以实现更好的工艺控制,并提高互连设计的可重复性。这台机器还具有现代化的图形用户界面，可以用来控制过程参数。它还可以导入和导出GDSII文件,允许将现有设计转换为APPLIED MATERIALS互连格式。有了通过直观的命令支持角层覆盖和控制的能力，可以产生各种各样的工艺晶片。APPLIED MATERIALS Endura II Aluminum Interconnect还具有滤过式技术,该技术能够实现低温互连,并提高平面性和较低的固有接触电阻。这项功能由自动低温聚合物喷射工具支持,用于通过互连过滤。最后,Endura II铝互连（AMAT/APPLIED MATERIALS）为生产先进的铝基互连提供了集成、精确、高生产率和低成本的解决方桉。这一资产能够产生垂直边缘、接触电阻低、金属不会过度损失的高长宽比金属迹线，使其成为下一代光电和半导体技术的理想选择。
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