二手 AMAT / APPLIED MATERIALS Endura II #9195497 待售
看起来这件物品已经卖了。检查下面的类似产品或与我们联系,我们经验丰富的团队将为您找到它。
单击可缩放
已售出
ID: 9195497
PVD System
(4) Chambers
Process type: HT DSTTN
Chamber position: 1,2
Shutter option
Chamber body: SST
Chamber body part number: 0040-98657
Slit valve seal: Bonded
Slit valve door part number: 0040-84391
Target vendor: NIKKO
Target number: TAG72
DC Power supply (AE-MDX): ENI
APPLIED MATERIALS Part number master: 0190-22931
OEM Part number master: DCG200Z
Generator size: 20 kW
Total DC (12 kWh,24 kWh): 20 kW
Magnet rotation speed: 95 RPM
Magnet shim thickness: No data
Magnet type: TI / TIN
Magnet part number: 0010-03487
Magnet spacing: 1.0 mm
Adapter part number: 0040-69768
Upper shield part number: 0021-21234
Treatment: Bead blast
Lower shield part number: 0020-29706
Treatment: Bead blast
Dep ring part number: 0200-01080
Cover ring part number: 0021-22177
Treatment: Bead blast
Shutter: 0021-25014
Treatment: Bead blast
Pedestal type: HT ECHUCK
Pedestal part number: 0010-27430
Heater spacing: 55 mm
Heater spacing: -51000 Steps
Minimum heater spacing: 32 mm
Minimum heater spacing: -69000 Steps
Maximum heater spacing: 55 mm
Maximum heater spacing: -51000 Steps
CRYO Gate valve: (3) Positions
MFC 1 Gas: N2 Process
MFC 1 Size: 200
MFC 1 Type: N2
MFC 1 Part number: 0015-02992
MFC 2 Gas: None
MFC 3 Gas: Ar process
MFC 3 Size: 150
MFC 3 Type: Ar
MFC 3 Part number: 0015-02992
MFC 4 Gas: ArH
MFC 4 Size: 20
MFC 4 Type: Ar
Chamber base pressure (T): 3-E8
Chamber rate-of-rise: 650 nTorr / Min
Process Ar supply pressure: 34.7
Process N2 supply pressure: 33.9
Vent Ar pressure: 47.7
CDA: 95.7
Slit valve CDA: 85
Cooling water flow: 11.2 GPM
Process type: RT DSTTN
Chamber position: 3,4
Shutter option
Chamber body: SST
Chamber body part number: 0040-98657
Slit valve seal: Bonded
Slit valve door part number: 0040-84391
Target vendor: NIKKO / TOSOH
Target number: TAG 72
Bake out / Idle power: 0.4 %
DC Power supply (AE-MDX): ENI
APPLIED MATERIALS Part number master: 0190-22931
OEM Part number master: DCG200Z
Generator size : 20 kW
Total DC (12 kWh,24kWh): 20 kW
Magnet rotation speed: 95 RPM
Magnet shim thickness: No data
Magnet type: TI / TIN
Magnet part number: 0010-03487
Magnet spacing: 1.1 mm
Adapter part number: 0040-69768
Upper shield part number: 0021-21234
Treatment: Bead blast
Lower shield part number: 0021-22065
Dep ring part number: 0040-07291
Cover ring part number: 0021-22064
Shutter: 0021-26609
Pedestal type: Advanced A101
Pedestal part number: 0010-27432
Heater spacing: 55 mm
Heater spacing: -51000 Steps
Minimum heater spacing: 32 mm
Minimum heater spacing: -69000 Steps
Maximum heater spacing: 55 mm
Maximum heater spacing: -51000 Steps
CRYO Gate valve: (3) Positions
MFC 1 Gas: N2 Process
MFC 1 Size: 200
MFC 1 Type: N2
MFC 1 Part number: 0015-02992
MFC 2 Gas: None
MFC 3 Gas: Ar process
MFC 3 Size: 150
MFC 3 Type: Ar
MFC 3 Part number: 0015-02992
Chamber base pressure: 3-E8 T
Chamber rate-of-rise: 650 nTorr / Min
Process Ar supply pressure: 34.7
Process N2 supply pressure: 33.9
Vent Ar pressure: 47.7
CDA: 95.7
Silt valve CDA: 85
Cooling water flow: 11.2 GPM.
AMAT/APPLIED MATERIALS/AKT Endura II是一种双室氧化/蚀刻/CVD/ALD反应堆设备，用于先进的半导体应用和器件制造。它旨在提供高吞吐量和提高生产率。该系统采用两室设计，能够在不同的过程室中同时运行，从而实现更高的吞吐量和更好的均匀性。腔室具有独立的温度控制功能，最高工作温度为1020 °C。AKT Endura II具有高密度等离子体（HDP）处理能力，在精密蚀刻、溅射沉积、化学气相沉积（CVD）和原子层沉积（ALD）等领域提供优势。其先进的HDP控制功能可实现更精确的蚀刻和溅射,以实现更精细的线条分辨率和纳米特征更精细的沉积。此外，该单元支持多种等离子体来源，使广泛的材料得以使用。AMAT Endura II还包括实时监控,以实现可靠的过程控制和更高的产量。用户友好的图形用户界面（GUI）允许过程自动化,可根据需要在不同配方集之间快速切换。使用GUI可以调整先进薄膜结构和沉积工艺的配方,并能够查看底物级参数,如温度、压力和晶圆均匀性。该机器还具有高级自动校正模块（ACM）,它提供了一种优化过程结果的方法,用户干预较少。此模块允许用户即时监视和调整参数,以最小的停机时间确保改进的流程一致性和可重复性。此外,多种配方优化、智能晶圆处理和精确的过程控制等智能技术功能可提高产量和质量。由于其先进的特性和功能，APPLIED MATERIALS Endura II是先进半导体加工的理想选择，允许用户实现高生产吞吐量和提高设备质量。该工具提供卓越的性能、可靠性和灵活性,以提高产量和工艺一致性。
还没有评论