二手 TEL / TOKYO ELECTRON ACT 12 #9313699 待售
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ID: 9313699
晶圆大小: 12"
优质的: 2004
System, 12"
Wafer type: Notch
Right to left
Loading configuration: (4) Loaders
Cassette type: FOUP
Main controller missing
Main system:
Mainframe with system controller
(4) Cassettes
(25) Slots
Coater unit (2-1, 2-2 Modules):
(4) Dispense nozzles with temperature controlled lines
RDS Pump
PR Suck-back valve: (8) Auto suck-back valves
Rinse nozzle: Back / EBR / Solvent bath for etch unit
Rinse system: 3-Liters (2) buffer tank systems
Thinner supply: CCSS
Programmable side rinse:
(4) PR Nozzles
(8) Bottles: (2) Bottles / (2) Nozzles
BCT Unit (2-3,2-4 Modules):
(4) Dispense nozzles with temperature controlled line
RDS Pump
PR Suck-back valve: (8) Auto suck-back valves
Rinse nozzle: Back / EBR / Solvent bath for each unit
Rinse system: 3-Liters (2) buffer tank systems
Thinner supply: CCSS Canister tank
Developer unit (3-1, 3-2, 3-3, 3-4 Modules):
NLD Nozzle / Unit
(2) System nozzles for DI rinse
2-Points for back side rinse
Developer system: 3-Liter (2) buffer tank systems
Developer supply: CCSS
Developer temperature control system
ASML I/F Wafer stage
(2) Adhesion units (ADH):
Sealing closed chamber with Built-in hot plate
HMDS Tank with float sensor
HMDS Supply: Local bottle
(4) Low temperature Hot Plates (LHP)
(3) High temperature Hot Plates (HHP)
(9) Chill plates (TCP)
(12) Precision Hot Plates (PHP)
(2) TRS Units
(2) Wafer Edge Exposure (WEE) Units
(2) Temperature Control Units (TCU)
OEM Type
Temperature control units (TCU) MFC controller
Chemical cabinets:
Cabinet 1: HNDS And solvent cabinet
Cabinet 2: DEV Solution chemical cabinet
Missing parts:
Main controller
T and H Controller
AC Power supply: 200/220 VAC, 668 A (Full-load Ampere)
2004 vintage.
TEL/TOKYO ELECTRON ACT 12是一款由TEL设计的光阻处理设备。它用于微加工和半导体器件制造过程。系统使用光刻工艺将所需的特征绘制到晶片上,然后蚀刻成金属层。这一过程涉及将对紫外线敏感的光刻胶层暴露在图样上。暴露在光线下的区域变得坚硬,而剩下的区域则保持可溶性。硬区域充当蚀刻掩模,晶片使用光刻层形成的图样进行蚀刻。TEL ACT 12提供了准确且可重复的模式形成过程。高分辨率0.25微米,场大小5mm。该单元还可以在单程中执行双级曝光循环,从而允许形成复杂的模式。该机器的设计考虑了模块化和灵活性,并提供了一系列可选功能,可添加到工具中以增强其功能。此外,TOKYO ELECTRON ACT12的曝光时间很快,每晶圆的曝光时间只有2秒。这使得晶片的高吞吐量可以在短时间内得到处理。TOKYO ELECTRON ACT 12也使用线性扫描技术,确保在底物上有均匀剂量的紫外线。这样可以形成更平滑、更精确定义的特征。此外,资产有一台板载计算机,其中包含所有相关的风险参数,可以根据用户的需要进行定制。总体而言,ACT 12是一个可靠和高效的工具,用于微加工和半导体器件制造过程。其高分辨率、快速曝光时间、高吞吐量、灵活的模型设计以及UV线性扫描,使其成为业内专业人士的理想选择。
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