二手 TEL / TOKYO ELECTRON Telformula ALD High-K #9282608 待售
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ID: 9282608
晶圆大小: 12"
优质的: 2015
Vertical LPCVD Furnace, 12"
VCM-5D-012L Heater
Maximum operating temperature: 300°C
ART Control
N2 Load lock
Wafer type: Si SEMI STD-Notch
(50) Production wafers
Dry pumps missing
Loading area light: White (LED)
RCU Duct length FNC to RCU: 20m
Chemical prefilter hydrocarb
Chemical prefilter location: FNC Top
Wafer / Carrier handler:
Carrier type: FOUP / 25-Slots SEMI STD
ENTEGRIS A300 FOUP
Carrier stage capacity: 10
Info pad A,B: Pin
Info pad C,D: Pin
Fork material: Al2O3
Furnace facilities:
Furnace exhaust connection point: Top connection
Cooling water connection point: Bottom connection
Air intake point: Top
Gas distribution system:
IGS Type: IGS 1.5" W-Seal rail-mount
FUJIKIN IGS System
Tubing bends: <90°C
PALL IGS Final filter
IGS Regulator: CKD
HORIBA STEC IGS MFC Digital
HORIBA SEC-G111 IGS MFC For low flow N2 purge
IGS Press transducer: Nagano
HORIBA STEC LSC-F530 Liquid source vapor system
For ZAC HORIBA STEC TL-2014
Auto refill system TMA: AIR LEQUIDE / CANDI
Auto refill system ZAC: AIR LEQUIDE / CANDI
OP-500H-RE1 Ozone delivery system
Injector O-Ring material: DU353
Gas facilities:
Incoming gas connection point: Bottom connection
Gas VENT Connection point: Bottom connection
Exhaust VENT Connection point: Bottom connection
Gas unit exhaust connection point: Bottom connection
Exhaust:
Vacuum gauge pressure controller: MKS Capacitance manometer (Hot)
Vacuum gauge press monitor 133 kpa: MKS Capacitance manometer (Hot)
Vacuum gauge pump monitor: MKS Capacitance manometer (Hot)
CKD VEC-VH8-X0110 Main valve
VYX-0279-CONT Controller
EDWARDS iXH-1820T Pump
EDWARDS TPU Abatement system
Type: Burning type
Exhaust box: Wide type (1200 mm)
Exhaust O-Ring material: DU353
FNC Power box: 30m
FNC RCU: 30m
Power box RCU: 30m
Power box pump unit: 30m
Power box refill system: 30m
Host communications: Comply with GJG
Equipment host I/F Connection: Power box top HSMS (10Base-T/100Base-TX)
Ingenio
OHT Capability
Load port operation: Lower and upper
PIO I/F Location: FNC Top
PIO Provided by: TEL
HOKUYO DMS-HB1-Z PIO
Carrier ID Reader writer type: RF
CIDRW Lower L/P: Read
CIDRW Upper L/P: Read
CIDRW FIMS: Read/Write
CIDRW: HOKUYO DMS-HB1-Z Series
CIDRW Tag orientation: Vertical
Customized management signals: PT/Water
Interface:
Signal tower model: LCE Series
Signal tower colors: Red/Blue/Yellow/Green
Signal tower location: Front for 10 Stocker (Left)
Front operation panel
MMI and gas flowchart: Gas box and front operation panel Installed
Indicator type: HOKUYO DMS-HB1-Z Series
Operator switch: Operator access / White cover with orange light
Pressure display unit: MPa / Torr
Cabinet exhaust pressure display: Pa
Warning label: Chinese/English
Power:
Power cable input entrance loc: Power box top
Power supply:
3 Phase connection type: Star connection
200/400 VAC, 60 Hz, 3 Phase
2015 vintage.
TEL/TOKYO ELECTRON TELFORMULA ALD High-K是为高k介电薄膜层高精度沉积而设计的先进蚀刻及各向异性蚀刻设备。该系统利用先进的Telformula ALD技术,提供卓越的线路清晰度和出色的步长覆盖,提高了设备的产量和性能。该单元使用户能够将高性能介电层与SiO2、SiN、SiC或它们的任意组合一起沉积。它在手动和自动化模式下工作,允许广泛的蚀刻过程。该机还利用反应性离子蚀刻(RIE)结构对图样和线条结构进行高精度蚀刻。TEL Telformula ALD High-K专为批处理而设计,为大量零件和基材提供高通量蚀刻。该工具配备了Advanced Process Control (APC)软件,这是一个用于监控蚀刻过程的强大的新工具。该软件提供对蚀刻工艺参数的实时分析,并利用原位反馈控制最大限度地减少变化。该资产具有广泛的工艺参数,包括0°C至350°C的蚀刻温度范围、高达500°C的基板温度、高达6Torr的蚀刻压力、长达5分钟的蚀刻时间以及多个进气阀选项。该型号还提供了可选的压力。中流(PIF)设备,为蚀刻过程中的蚀刻压力和气流提供精确的控制。TOKYO ELECTRON TELFORMULA ALD High-K的设计是为了与多种抗蚀剂材料兼容,并允许精确控制蚀刻参数以实现可重复的高性能蚀刻结果。其优化的工艺平台提高了生产率,具有比其他蚀刻系统更高的蚀刻速率和更高的装置产量。这款蚀刻器还能够产生低至0.3 µm线宽的高分辨率特性,具有非凡的均匀性和可重复性,非常适合发展具有精确线定义和特征均匀性的半导体器件。
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