二手 TEL / TOKYO ELECTRON Telformula ALD High-K #9282608 待售

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ID: 9282608
晶圆大小: 12"
优质的: 2015
Vertical LPCVD Furnace, 12" VCM-5D-012L Heater Maximum operating temperature: 300°C ART Control N2 Load lock Wafer type: Si SEMI STD-Notch (50) Production wafers Dry pumps missing Loading area light: White (LED) RCU Duct length FNC to RCU: 20m Chemical prefilter hydrocarb Chemical prefilter location: FNC Top Wafer / Carrier handler: Carrier type: FOUP / 25-Slots SEMI STD ENTEGRIS A300 FOUP Carrier stage capacity: 10 Info pad A,B: Pin Info pad C,D: Pin Fork material: Al2O3 Furnace facilities: Furnace exhaust connection point: Top connection Cooling water connection point: Bottom connection Air intake point: Top Gas distribution system: IGS Type: IGS 1.5" W-Seal rail-mount FUJIKIN IGS System Tubing bends: <90°C PALL IGS Final filter IGS Regulator: CKD HORIBA STEC IGS MFC Digital HORIBA SEC-G111 IGS MFC For low flow N2 purge IGS Press transducer: Nagano HORIBA STEC LSC-F530 Liquid source vapor system For ZAC HORIBA STEC TL-2014 Auto refill system TMA: AIR LEQUIDE / CANDI Auto refill system ZAC: AIR LEQUIDE / CANDI OP-500H-RE1 Ozone delivery system Injector O-Ring material: DU353 Gas facilities: Incoming gas connection point: Bottom connection Gas VENT Connection point: Bottom connection Exhaust VENT Connection point: Bottom connection Gas unit exhaust connection point: Bottom connection Exhaust: Vacuum gauge pressure controller: MKS Capacitance manometer (Hot) Vacuum gauge press monitor 133 kpa: MKS Capacitance manometer (Hot) Vacuum gauge pump monitor: MKS Capacitance manometer (Hot) CKD VEC-VH8-X0110 Main valve VYX-0279-CONT Controller EDWARDS iXH-1820T Pump EDWARDS TPU Abatement system Type: Burning type Exhaust box: Wide type (1200 mm) Exhaust O-Ring material: DU353 FNC Power box: 30m FNC RCU: 30m Power box RCU: 30m Power box pump unit: 30m Power box refill system: 30m Host communications: Comply with GJG Equipment host I/F Connection: Power box top HSMS (10Base-T/100Base-TX) Ingenio OHT Capability Load port operation: Lower and upper PIO I/F Location: FNC Top PIO Provided by: TEL HOKUYO DMS-HB1-Z PIO Carrier ID Reader writer type: RF CIDRW Lower L/P: Read CIDRW Upper L/P: Read CIDRW FIMS: Read/Write CIDRW: HOKUYO DMS-HB1-Z Series CIDRW Tag orientation: Vertical Customized management signals: PT/Water Interface: Signal tower model: LCE Series Signal tower colors: Red/Blue/Yellow/Green Signal tower location: Front for 10 Stocker (Left) Front operation panel MMI and gas flowchart: Gas box and front operation panel Installed Indicator type: HOKUYO DMS-HB1-Z Series Operator switch: Operator access / White cover with orange light Pressure display unit: MPa / Torr Cabinet exhaust pressure display: Pa Warning label: Chinese/English Power: Power cable input entrance loc: Power box top Power supply: 3 Phase connection type: Star connection 200/400 VAC, 60 Hz, 3 Phase 2015 vintage.
TEL/TOKYO ELECTRON TELFORMULA ALD High-K是为高k介电薄膜层高精度沉积而设计的先进蚀刻及各向异性蚀刻设备。该系统利用先进的Telformula ALD技术,提供卓越的线路清晰度和出色的步长覆盖,提高了设备的产量和性能。该单元使用户能够将高性能介电层与SiO2、SiN、SiC或它们的任意组合一起沉积。它在手动和自动化模式下工作,允许广泛的蚀刻过程。该机还利用反应性离子蚀刻(RIE)结构对图样和线条结构进行高精度蚀刻。TEL Telformula ALD High-K专为批处理而设计,为大量零件和基材提供高通量蚀刻。该工具配备了Advanced Process Control (APC)软件,这是一个用于监控蚀刻过程的强大的新工具。该软件提供对蚀刻工艺参数的实时分析,并利用原位反馈控制最大限度地减少变化。该资产具有广泛的工艺参数,包括0°C至350°C的蚀刻温度范围、高达500°C的基板温度、高达6Torr的蚀刻压力、长达5分钟的蚀刻时间以及多个进气阀选项。该型号还提供了可选的压力。中流(PIF)设备,为蚀刻过程中的蚀刻压力和气流提供精确的控制。TOKYO ELECTRON TELFORMULA ALD High-K的设计是为了与多种抗蚀剂材料兼容,并允许精确控制蚀刻参数以实现可重复的高性能蚀刻结果。其优化的工艺平台提高了生产率,具有比其他蚀刻系统更高的蚀刻速率和更高的装置产量。这款蚀刻器还能够产生低至0.3 µm线宽的高分辨率特性,具有非凡的均匀性和可重复性,非常适合发展具有精确线定义和特征均匀性的半导体器件。
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